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Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE) 会议论文
2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China
Yang X.; Su S.; Yi X.; Mei T.
收藏  |  浏览/下载：22/0  |  提交时间：2013/03/25
A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural  electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing  and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance  Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications  Switzerland.  
The reactivity of PtNi bimetallic catalyst: from model systems to supported catalysts 会议论文
18th international vacuum congress, 中国, 2010-8-23
慕仁涛; 傅强; 张辉; 王传付; 徐红; 翟润生; 谭大力; 包信和
收藏  |  浏览/下载：11/0  |  提交时间：2011/07/11
Tri-buffer process: A new approach to obtain high-quality ZnO epitaxial films on sapphire substrates 会议论文
JOURNAL OF ELECTRONIC MATERIALS, 48th Electronic Materials Conference (EMC), University Pk, PA, Web of Science
Mei, Z. X.; Du, X. L.; Wang, Y.; Ying, M. J.; Zeng, Z. Q.; Yuan, H. T.; Jia, J. F.; Xue, Q. K.; Zhang, Z.
收藏  |  浏览/下载：3/0
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer 会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Li, JM; Zeng, YP
收藏  |  浏览/下载：54/0  |  提交时间：2010/03/09
Morphology and wetting layer properties of InAs/GaAs nanostructures 会议论文
5th international conference on semiconductor quantum dots, gyeongju, south korea, may 11-16, 2008
作者:  Xu B
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/09
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, FW; Gao, HY; Zhang, Y; Li, JM; Zeng, YP; Wang, GH; Yang, FH
收藏  |  浏览/下载：134/0  |  提交时间：2010/03/09
GaN  MOCVD  LED  nano-pattern  SEM  HRXRD  PL  
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhang, Y; Yan, FW; Gao, HY; Li, JM; Zeng, YP; Wang, GH; Yang, FH
收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, JC; Wang, JX; Liu, NX; Liu, Z; Li, JM
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/09
Buffer influence on AlSb/InAs/AlSb quantum wells 会议论文
14th International Conference on Molecular Beam Epitaxy (MBE XIV), Tokyo, JAPAN, SEP 03-08, 2006
作者:  Li, ZH;  Wang, WX;  Liu, LS;  Gao, HC;  Jiang, ZW
收藏  |  浏览/下载：4/0  |  提交时间：2015/07/31

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