Buffer influence on AlSb/InAs/AlSb quantum wells

	Buffer influence on AlSb/InAs/AlSb quantum wells
	Li, ZH; Wang, WX; Liu, LS; Gao, HC; Jiang, ZW; Zhou, JM; Chen, H
	2007-04-01
会议名称	14th International Conference on Molecular Beam Epitaxy (MBE XIV)
会议日期	SEP 03-08, 2006
会议地点	Tokyo, JAPAN
关键词	atomic force microscopy X-ray diffraction molecular beam epitaxy quantum well
页码	181-184
通讯作者	Wang, WX (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China.
会议录	JOURNAL OF CRYSTAL GROWTH
会议录出版地	AMSTERDAM
学科主题	Crystallography; Materials Science; Physics
语种	英语
ISSN号	0022-0248
WOS记录号	WOS:000246015800042
内容类型	会议论文
源URL	[http://ir.lzu.edu.cn/handle/262010/113381]
专题	物理科学与技术学院_会议论文
推荐引用方式 GB/T 7714	Li, ZH,Wang, WX,Liu, LS,et al. Buffer influence on AlSb/InAs/AlSb quantum wells[C]. 见:14th International Conference on Molecular Beam Epitaxy (MBE XIV). Tokyo, JAPAN. SEP 03-08, 2006.