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Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 4
作者:  Li, Jin-Lun;  Cui, Shao-Hui;  Xu, Jian-Xing;  Cui, Xiao-Ran;  Guo, Chun-Yan
收藏  |  浏览/下载：39/0  |  提交时间：2018/05/14
Design of power integrated circuits in full AlGaN/GaN MIS-HEMT configuration for power conversion 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 卷号: 214
作者:  Sun, Ruize;  Liang, Yung C.;  Yeo, Yee-Chia;  Wang, Yun-Hsiang;  Zhao, Cezhou
收藏  |  浏览/下载：3/0  |  提交时间：2019/11/26
GaN high electron mobility transistors with AlInN back barriers 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 662
作者:  He, XG;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Chen, P
收藏  |  浏览/下载：18/0  |  提交时间：2017/03/11
Growths of Fe-doped GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices 期刊论文
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 1
作者:  Wang, K;  Xing, YH;  Han, J;  Zhao, KK;  Guo, LJ
收藏  |  浏览/下载：51/0  |  提交时间：2017/03/11
Polar semiconductor heterojunction structure energy band diagram considerations 期刊论文
JOURNAL OF APPLIED PHYSICS, 2016
Lin, Shuxun; Wen, Cheng P.; Wang, Maojun; Hao, Yilong
收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03
Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices 期刊论文
SOLID-STATE ELECTRONICS, 2015, 卷号: 114, 页码: 148-154
作者:  Huang, Huolin;  Liang, Yung Chii
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/09
Scattering due to spacer layer thickness fluctuation on two dimensional electron gas in AlGaAs/GaAs modulation-doped heterostructures 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2, 页码: 23705
Liu GP; Wu J; Lu YW; Li ZW; Song YF; Li CM; Yang SY; Liu XL; Zhu QS; Wang ZG
收藏  |  浏览/下载：23/0  |  提交时间：2012/02/06
Self-consistent analysis of alsb/inas high electron mobility transistor structures 期刊论文
Journal of applied physics, 2010, 卷号: 108, 期号: 4, 页码: 7
作者:  Li, Yanbo;  Zhang, Yang;  Zeng, Yiping
收藏  |  浏览/下载：16/0  |  提交时间：2019/05/12
Self-consistent analysis of AlSb/InAs high electron mobility transistor structures 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 4, 页码: 7
作者:  Li, Yanbo;  Zhang, Yang;  Zeng, Yiping
收藏  |  浏览/下载：0/0  |  提交时间：2021/02/02
Optimization of two-dimensional electron gases and I-V characteristics for AlGaN/GaN HEMT devices 期刊论文
2010, 2010
Yan Wang; Long Ma; Zhiping Yu; Lilin Tian
收藏  |  浏览/下载：4/0

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