Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer

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	Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
	Zhao, YM ; Sun, GS ; Liu, XF ; Li, JY ; Zhao, WS ; Wang, L ; Li, JM ; Zeng, YP
	2009
会议名称	international conference on silicon carbide and related materials
会议日期	oct 14-19, 2007
会议地点	otsu, japan
关键词	Silicon Carbide Aluminum Nitride buffer layer LPCVD
页码	pts 1 and 2,600-603,: 251-254 part 1-2
通讯作者	zhao, ym, chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china.
中文摘要	using aln as a buffer layer, 3c-sic film has been grown on si substrate by low pressure chemical vapor deposition (lpcvd). firstly growth of aln thin films on si substrates under varied v/iii ratios at 1100 degrees was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the v/iii ratio of 10000. annealing at 1300 degrees c indicated the surface morphology and crystallinity stability of aln film. secondly the 3c-sic film was grown on si substrate with aln buffer layer. compared to that without aln buffer layer, the crystal quality of the 3c-sic film was improved on the aln/si substrate, characterized by x-ray diffraction (xrd) and raman measurements.
英文摘要	using aln as a buffer layer, 3c-sic film has been grown on si substrate by low pressure chemical vapor deposition (lpcvd). firstly growth of aln thin films on si substrates under varied v/iii ratios at 1100 degrees was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the v/iii ratio of 10000. annealing at 1300 degrees c indicated the surface morphology and crystallinity stability of aln film. secondly the 3c-sic film was grown on si substrate with aln buffer layer. compared to that without aln buffer layer, the crystal quality of the 3c-sic film was improved on the aln/si substrate, characterized by x-ray diffraction (xrd) and raman measurements.; zhangdi于2010-03-09批量导入; made available in dspace on 2010-03-09t07:08:19z (gmt). no. of bitstreams: 1 305.pdf: 252141 bytes, checksum: 4d95b3f2dc7121752d6a95a52cef5d83 (md5) previous issue date: 2009; japan soc appl phys.; assoc promot elect, elect & informat engn.; ceram soc japan.; ieee eds, kansai chapter.; ieej.; inst elect, informat & commun engineers.; japanese assoc crystal growth.; surface sci soc japan.; vacuum soc japan.; [zhao, y. m.; sun, g. s.; liu, x. f.; li, j. y.; zhao, w. s.; wang, l.; li, j. m.; zeng, y. p.] chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	japan soc appl phys.; assoc promot elect, elect & informat engn.; ceram soc japan.; ieee eds, kansai chapter.; ieej.; inst elect, informat & commun engineers.; japanese assoc crystal growth.; surface sci soc japan.; vacuum soc japan.
会议录	silicon carbide and related materials 2007
会议录出版者	trans tech publications ltd ; laublsrutistr 24, ch-8717 stafa-zurich, switzerland
会议录出版地	laublsrutistr 24, ch-8717 stafa-zurich, switzerland
学科主题	半导体材料
语种	英语
ISSN号	0255-5476
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/8336]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao, YM,Sun, GS,Liu, XF,et al. Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer[C]. 见:international conference on silicon carbide and related materials. otsu, japan. oct 14-19, 2007.