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	Tri-buffer process: A new approach to obtain high-quality ZnO epitaxial films on sapphire substrates
	Mei, Z. X. ; Du, X. L. ; Wang, Y. ; Ying, M. J. ; Zeng, Z. Q. ; Yuan, H. T. ; Jia, J. F. ; Xue, Q. K. ; Zhang, Z.
	2010-05-06 ; 2010-05-06
会议名称	JOURNAL OF ELECTRONIC MATERIALS ; 48th Electronic Materials Conference (EMC) ; University Pk, PA ; Web of Science
关键词	ZnO MgO sapphire tri-buffer molecular beam epitaxy (MBE) LIGHT-EMITTING-DIODES P-N-JUNCTIONS OXIDE SEMICONDUCTORS CONTROLLED GROWTH FABRICATION HETEROJUNCTION LAYER Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied
中文摘要	A tri-buffer method was applied to achieve layer-by-layer growth of high-quality ZnO films on sapphire (0001) substrates by rf plasma-assisted molecular beam epitaxy (MBE). After sufficient nitridation of the substrate, MgO and ZnO buffer layers were subsequently deposited on the resulting AIN layer. An atomically smooth ZnO surface with a roughness less than 1 nm in a 10 mu m x 10 mu m scanned area was obtained with this method. The crystal quality was also improved, as characterized by reflection high-energy electron diffraction (RHEED), x-ray diffraction (XRD), Raman spectroscopy, and transmission electron microscopy (TEM). The results indicate that the tri-buffer process could reduce the large lattice mismatch between ZnO and nitrided sapphire and facilitate the two-dimensional (2-D) growth of the ZnO epilayer. A model is proposed to understand the observations.; Penn State Univ
会议录出版者	MINERALS METALS MATERIALS SOC ; WARRENDALE ; 184 THORN HILL RD, WARRENDALE, PA 15086 USA
语种	英语 ; 英语
内容类型	会议论文
源URL	[http://hdl.handle.net/123456789/6884]
专题	清华大学
推荐引用方式 GB/T 7714	Mei, Z. X.,Du, X. L.,Wang, Y.,et al. Tri-buffer process: A new approach to obtain high-quality ZnO epitaxial films on sapphire substrates[C]. 见:JOURNAL OF ELECTRONIC MATERIALS, 48th Electronic Materials Conference (EMC), University Pk, PA, Web of Science.

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