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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：53/10  |  提交时间：2011/07/05
Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908
Zheng XH (Zheng X. H.); Huang AP (Huang A. P.); Xiao ZS (Xiao Z. S.); Yang ZC (Yang Z. C.); Wang M (Wang M.); Zhang XW (Zhang X. W.); Wang WW (Wang W. W.); Chu PK (Chu Paul K.)
收藏  |  浏览/下载：10/0  |  提交时间：2010/11/14
OXYGEN  GATE  DIFFUSION  FILMS  
Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文
applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720
Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP
收藏  |  浏览/下载：69/25  |  提交时间：2010/03/08
The effect of interposing nanocrystalline Si(B) P plus layer on the photovoltaic properties of a-Si: H tandem solar cells 会议论文
solar world congress of the international-solar-energy-society, beijing, peoples r china, sep 18-21, 2007
Shi, MJ; Wang, ZG; Zhang, C; Peng, WB; Zeng, XB; Diao, HW; Kong, GL; Liao, XB
收藏  |  浏览/下载：35/0  |  提交时间：2010/03/09
Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors 期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 7, 页码: 3677-3682
Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping)
收藏  |  浏览/下载：66/0  |  提交时间：2010/04/11
Microstructure characterization of transition films from amorphous to nanocrocrystalline silicon 期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 1-2, 页码: 27-32
Xu YY; Liao XB; Kong GL; Zeng XB; Hu ZH; Diao HW; Zhang SB
收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12
Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells 期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 155-160
作者:  Jiang DS
收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12
Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
Dong HW; Zhao YW; Zeng YP; Jiao JH; Li JM; Lin LY
收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY
收藏  |  浏览/下载：351/16  |  提交时间：2010/08/12
Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141
作者:  Xu B
收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12

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