Influence of strain on annealing effects of In(Ga)As quantum dots

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	Influence of strain on annealing effects of In(Ga)As quantum dots
	Xu B
刊名	journal of crystal growth
	2002
卷号	244 期号:2 页码:136-141
关键词	low dimensional structures strain molecular beam epitaxy quantum dots ELECTRONIC-STRUCTURE PHOTOLUMINESCENCE INTERDIFFUSION TRANSITIONS SPECTRA
ISSN号	0022-0248
通讯作者	zhang yc,nanyang technol univ,sch elect & elect engn,photon lab 1,nanyang ave,singapore 639798,singapore.
中文摘要	post-growth rapid thermal annealing has been performed with in(ga)as quantum dots (qds) at different strain statuses. it is confirmed that the strain-enhanced interdiffusion decreases the inhomogeneous size distribution. the preferential lateral interdiffusion of qds during annealing was observed. we attribute it to the naturally anisotropic strain distribution in/around the dots and the saturation of strain difference between the base boundary and the top of the dots. there exist strain-enhanced mechanism and vacancy diffusion enhanced mechanism during the annealing. as to which one dominates the qd interdiffusion depends on the thickness of capping layer and the annealing temperature. (c) 2002 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11786]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. Influence of strain on annealing effects of In(Ga)As quantum dots[J]. journal of crystal growth,2002,244(2):136-141.
APA	Xu B.(2002).Influence of strain on annealing effects of In(Ga)As quantum dots.journal of crystal growth,244(2),136-141.
MLA	Xu B."Influence of strain on annealing effects of In(Ga)As quantum dots".journal of crystal growth 244.2(2002):136-141.