Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy

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	Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy
	Dong HW ; Zhao YW ; Zeng YP ; Jiao JH ; Li JM ; Lin LY
刊名	journal of crystal growth
	2003
卷号	250 期号:3-4 页码:364-369
关键词	diffusion interfaces substrates molecular beam epitaxy phosphides semiconducting indium phosphide UNDOPED SEMIINSULATING INP CHEMICAL-VAPOR-DEPOSITION PHOSPHIDE VAPOR FE INTERFACE PHOTOLUMINESCENCE WAFER UNIFORMITY DIFFUSION PRESSURE
ISSN号	0022-0248
通讯作者	dong hw,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china.
中文摘要	tensile-strained inalas layers have been grown by solid-source molecular beam epitaxy on as-grown fe-doped semi-insulating (si) inp substrates and undoped si inp substrates obtained by annealing undoped conductive inp wafers (wafer-annealed inp). the effect of the two substrates on inalas epilayers and inalas/inp type ii heterostructures has been studied by using a variety of characterization techniques. our calculation data proved that the out-diffusion of fe atoms in inp substrate may not take place due to their low diffusion, coefficient. double-crystal x-ray diffraction measurements show that the lattice mismatch between the inalas layers and the two substrates is different, which is originated from their different fe concentrations. furthermore, photoluminescence results indicate that the type ii heterostructure grown on the wafer-annealed inp substrate exhibits better optical and interface properties than that grown on the as-grown fe-doped substrate. we have also given a physically coherent explanation on the basis of these investigations. (c) 2003 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11636]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Dong HW,Zhao YW,Zeng YP,et al. Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy[J]. journal of crystal growth,2003,250(3-4):364-369.
APA	Dong HW,Zhao YW,Zeng YP,Jiao JH,Li JM,&Lin LY.(2003).Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy.journal of crystal growth,250(3-4),364-369.
MLA	Dong HW,et al."Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy".journal of crystal growth 250.3-4(2003):364-369.