Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

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	Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks
	Zheng XH (Zheng X. H.) ; Huang AP (Huang A. P.) ; Xiao ZS (Xiao Z. S.) ; Yang ZC (Yang Z. C.) ; Wang M (Wang M.) ; Zhang XW (Zhang X. W.) ; Wang WW (Wang W. W.) ; Chu PK (Chu Paul K.)
刊名	applied physics letters
	2010
卷号	97 期号:13 页码:art. no. 132908
关键词	OXYGEN GATE DIFFUSION FILMS
通讯作者	huang, ap, beihanguniv, deptphys, beijing 100191, peoples r china. 电子邮箱地址: aphuang@buaa.edu.cn
合作状况	国内
英文摘要	the origin of the flat band voltage roll-off (v-fb roll-off) in metal gate/high-k/ultrathin-sio2/si metal-oxide-semiconductor stacks is analyzed and a model describing the role of the dipoles at the sio2/si interface on the v-fb sharp roll-off is proposed. the v-fb sharp roll-off appears when the thickness of the sio2 interlayer diminishes to below the oxygen diffusion depth. the results derived using our model agree well with experimental data and provide insights to the mechanism of the v-fb sharp roll-off.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-14t13:20:29z no. of bitstreams: 1 origin of flat-band voltage sharp roll-off in metal gatehigh-kultrathin- sio2si p-channel metal-oxide-semiconductor stacks.pdf: 368934 bytes, checksum: 35c46da509a67a32e00fa1818c3f4fef (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-14t13:52:54z (gmt) no. of bitstreams: 1 origin of flat-band voltage sharp roll-off in metal gatehigh-kultrathin- sio2si p-channel metal-oxide-semiconductor stacks.pdf: 368934 bytes, checksum: 35c46da509a67a32e00fa1818c3f4fef (md5); made available in dspace on 2010-11-14t13:52:54z (gmt). no. of bitstreams: 1 origin of flat-band voltage sharp roll-off in metal gatehigh-kultrathin- sio2si p-channel metal-oxide-semiconductor stacks.pdf: 368934 bytes, checksum: 35c46da509a67a32e00fa1818c3f4fef (md5) previous issue date: 2010; our work was financially supported by national natural science foundation of china (grant nos. 50802005 and 11074020), program for new century excellent talents in university (grant no. ncet-08-0029), ph.d. program foundation of ministry of education of china (grant no. 200800061055), and hong kong research grants council (rgc) general research funds (grf) grant no. cityu 112608.; 国内
学科主题	半导体材料
收录类别	SCI
资助信息	our work was financially supported by national natural science foundation of china (grant nos. 50802005 and 11074020), program for new century excellent talents in university (grant no. ncet-08-0029), ph.d. program foundation of ministry of education of china (grant no. 200800061055), and hong kong research grants council (rgc) general research funds (grf) grant no. cityu 112608.
语种	英语
公开日期	2010-11-14
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13920]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zheng XH ,Huang AP ,Xiao ZS ,et al. Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks[J]. applied physics letters,2010,97(13):art. no. 132908.
APA	Zheng XH .,Huang AP .,Xiao ZS .,Yang ZC .,Wang M .,...&Chu PK .(2010).Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks.applied physics letters,97(13),art. no. 132908.
MLA	Zheng XH ,et al."Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks".applied physics letters 97.13(2010):art. no. 132908.