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CORC

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Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载：63/1  |  提交时间：2011/07/05
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM
收藏  |  浏览/下载：43/0  |  提交时间：2010/03/09
Bioactivity of Mg-ion-implanted zirconia and titanium 期刊论文
applied surface science, 2007, 卷号: 253, 期号: 6, 页码: 3326-3333
Liang H; Wan YZ; He F; Huang Y; Xu JD; Li JM; Wang YL; Zhao ZG
收藏  |  浏览/下载：22/0  |  提交时间：2010/03/29
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD 期刊论文
microelectronics journal, 2006, 卷号: 37, 期号: 7, 页码: 583-585
Ran JX; Wang XL; Hu GX; Wang JX; Li JP; Wang CM; Zeng YP; Li JM
收藏  |  浏览/下载：53/0  |  提交时间：2010/04/11
Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure 期刊论文
journal of crystal growth, 2005, 卷号: 285, 期号: 4, 页码: 459-465
作者:  Yin ZG
收藏  |  浏览/下载：304/5  |  提交时间：2010/04/11
Study of infrared luminescence from Er-implanted GaN films 会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
Chen WD; Song SF; Zhu JJ; Wang XL; Chen CY; Hsu CC
收藏  |  浏览/下载：24/0  |  提交时间：2010/11/15
Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing 期刊论文
semiconductor science and technology, 2004, 卷号: 19, 期号: 5, 页码: 571-573
Yi WB; Zhang EX; Chen M; Li N; Zhang GQ; Liu ZL; Wang X
收藏  |  浏览/下载：179/57  |  提交时间：2010/03/09
LAYERS  
Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer 期刊论文
journal of applied physics, 2004, 卷号: 96, 期号: 9, 页码: 4982-4988
Lu Y; Cong GW; Liu XL; Lu DC; Zhu QS; Wang XH; Wu JJ; Wang ZG
收藏  |  浏览/下载：78/29  |  提交时间：2010/03/09
High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文
symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002
Wang JX; Wang XL; Sun DZ; Li JM; Zeng YP; Hu GX; Liu HX; Lin LY
收藏  |  浏览/下载：31/0  |  提交时间：2010/10/29
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文
journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
作者:  Zhao DG
收藏  |  浏览/下载：299/12  |  提交时间：2010/08/12

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