Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)
	Zhao DG
刊名	journal of crystal growth
	2003
卷号	258 期号:1-2 页码:34-40
关键词	metalorganic chemical vapor deposition nitrides semiconductor III-V materials MOLECULAR-BEAM EPITAXY HIGH-QUALITY GAN CHEMICAL-VAPOR-DEPOSITION INTERMEDIATE LAYER ALAS ALN SURFACES SILICON FILMS
ISSN号	0022-0248
通讯作者	zhang bs,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china.
中文摘要	the influences of aln buffer thickness on the optical and the crystalline properties of metalorganic chemical vapor deposition wurtzite gan layers on si(i 11) substrate have been investigated. high-resolution x-ray diffraction and photoluminescence measurement reveal that the thickness of aln buffer exerts a strong influence on the distribution of dislocation and stress in gan epilayer. the evidence is further reinforced by atomic force microscopic observation of aln nucleation process. the optimum thickness of aln buffer to effectively suppress si diffusion has been determined by secondary-ion mass spectroscopy to be in the range of 13-20 nm. in addition, it is found that appropriate si diffusion in aln buffer helps to compensate the tensile strain in gan, which subsequently improves the optical quality of gan on si(i 1, 1), and reduces the cracks over the gan surface. (c) 2003 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/11446]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhao DG. Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)[J]. journal of crystal growth,2003,258(1-2):34-40.
APA	Zhao DG.(2003).Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111).journal of crystal growth,258(1-2),34-40.
MLA	Zhao DG."Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)".journal of crystal growth 258.1-2(2003):34-40.