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	Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD
	Ran JX ; Wang XL ; Hu GX ; Wang JX ; Li JP ; Wang CM ; Zeng YP ; Li JM
刊名	microelectronics journal
	2006
卷号	37期号:7页码:583-585
关键词	GaN Mg memory effect redistribution AlGaN/GaN HBTs MOCVD CHEMICAL-VAPOR-DEPOSITION HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATION
ISSN号	0026-2692
通讯作者	ran, jx, chinese acad sci, inst semicond, pob 912, beijing 100083, peoples r china. e-mail: jxran@red.semi.ac.cn
中文摘要	algan/gan npn heterojunction bipolar transistor structures were grown by low-pressure mocvd. secondary ion mass spectroscopy (sims) measurements were carried out to study the mg memory effect and redistribution in the emitter-base junction. the results indicated that there is a mg-rich film formed in the ongrowing layer after the cp2mg source is switched off. the mg-rich film can be confined in the base section by switching off the cp2mg source for appropriate time before the end of base growth. low temperature growth of the undoped gan spacer suppresses the mg redistribution from mg rich film. the delay rate of the mg profile in sample c with spacer growing in low temperature is about 56 nm/decade, which becomes sharper than 80 nm/decade of the samples a and b without low temperature spacer. (c) 2005 elsevier ltd. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10618]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ran JX,Wang XL,Hu GX,et al. Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD[J]. microelectronics journal,2006,37(7):583-585.
APA	Ran JX.,Wang XL.,Hu GX.,Wang JX.,Li JP.,...&Li JM.(2006).Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD.microelectronics journal,37(7),583-585.
MLA	Ran JX,et al."Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD".microelectronics journal 37.7(2006):583-585.

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