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	Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure
	Yin ZG
刊名	journal of crystal growth
	2005
卷号	285期号:4页码:459-465
关键词	crystal structure magnetron sputtering semiconducting III-V materials MOLECULAR-BEAM EPITAXY CHEMICAL-VAPOR-DEPOSITION INAS1-XSBX ALLOYS INASSB INSB
ISSN号	0022-0248
通讯作者	peng, ct, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: ctpeng@red.semi.ac.cn
中文摘要	the growth of highly lattice-mismatched inas0.3sb0.7 films on (100) gaas substrates by magnetron sputtering has been investigated and even epitaxial lnas(0.3)sb(0.7) films have been successfully obtained. a strong effect of the growth conditions on the film structure was observed, revealing that there was a growth mechanism transition from three-dimensional nucleation growth to epitaxial layer-by-layer growth mode when increasing the substrate temperature. a qualitative explanation for that transition was proposed and the critical conditions for the epitaxial layer-by-layer growth mode were also discussed. (c) 2005 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10914]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yin ZG. Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure[J]. journal of crystal growth,2005,285(4):459-465.
APA	Yin ZG.(2005).Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure.journal of crystal growth,285(4),459-465.
MLA	Yin ZG."Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure".journal of crystal growth 285.4(2005):459-465.

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