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CORC

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Fabrication and Characterization of High-Performance Thin-Film Transistors Based on Epitaxial Ta-Doped TiO2 Films 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 10, 页码: 4193-4204
作者:  Zhao, Wei;  Lv, Yuanjie;  Feng, Xianjin;  He, Linan;  Xiao, Hongdi
收藏  |  浏览/下载：13/0  |  提交时间：2019/12/11
Physical Activity, Sedentary Leisure Time, Circulating Metabolic Markers, and Risk of Major Vascular Diseases 期刊论文
2019, 卷号: 12, 期号: 9, 页码: 386-396
作者:  Pang Yuanjie;  Kartsonaki Christiana;  Du Huaidong;  Millwood Iona Y;  Guo Yu
收藏  |  浏览/下载：17/0  |  提交时间：2020/01/03
Central adiposity in relation to risk of liver cancer in Chinese adults: A prospective study of 0.5 million people 期刊论文
2019, 卷号: 145, 期号: 5, 页码: 1245-1253
作者:  Pang, Yuanjie;  Kartsonaki, Christiana;  Guo, Yu;  Chen, Yiping;  Yang, Ling
收藏  |  浏览/下载：11/0  |  提交时间：2020/01/03
Design of Virtual Guiding Tasks With Haptic Feedback for Assessing the Wrist Motor Function of Patients With Upper Motor Neuron Lesions 期刊论文
IEEE TRANSACTIONS ON NEURAL SYSTEMS AND REHABILITATION ENGINEERING, 2019, 卷号: 27, 页码: 984-994
作者:  Liu, Xiaoyu;  Zhu, Yuanjie;  Huo, Hongqiang;  Wei, Pengxu;  Wang, Lizhen
收藏  |  浏览/下载：11/0  |  提交时间：2019/12/30
Source-Field-Plated β-Ga2O3 MOSFET with Record Power Figure of Merit of 50.4 MW/cm2 期刊论文
IEEE Electron Device Letters, 2018
作者:  Yuanjie Lv;  Xingye zhou;  shibing Long;  Xubo Song;  Yuangang Wang
收藏  |  浏览/下载：47/0  |  提交时间：2019/04/18
beta-Ga2O3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 卷号: 77, 页码: 58-63
作者:  Cao, Qiong;  He, Linan;  Xiao, Hongdi;  Feng, Xianjin;  Lv, Yuanjie
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/11
β-Ga2O3epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD 期刊论文
Materials Science in Semiconductor Processing, 2018, 卷号: 77, 页码: 58-63
作者:  Cao, Qiong;  He, Linan;  Xiao, Hongdi;  Feng, Xianjin;  Lv, Yuanjie
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2018, 卷号: 124, 期号: 5
作者:  Cui, Peng;  Lin, Zhaojun;  Fu, Chen;  Liu, Yan;  Lv, Yuanjie
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/11
A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: 113, 页码: 160-168
作者:  Fu, Chen;  Lin, Zhaojun;  Cui, Peng;  Lv, Yuanjie;  Zhou, Yang
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors 期刊论文
SCIENTIFIC REPORTS, 2018, 卷号: 8
作者:  Cui, Peng;  Lv, Yuanjie;  Liu, Huan;  Cheng, Aijie;  Fu, Chen
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/11

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