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	Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors
	Cui, Peng; Lin, Zhaojun; Fu, Chen; Liu, Yan; Lv, Yuanjie
刊名	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
	2018
卷号	124期号:5
DOI	10.1007/s00339-018-1777-0
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4581207
专题	山东大学
作者单位	1.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China. 2.Hebei Semicond
推荐引用方式 GB/T 7714	Cui, Peng,Lin, Zhaojun,Fu, Chen,et al. Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2018,124(5).
APA	Cui, Peng,Lin, Zhaojun,Fu, Chen,Liu, Yan,&Lv, Yuanjie.(2018).Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,124(5).
MLA	Cui, Peng,et al."Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 124.5(2018).

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