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	A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors
	Fu, Chen; Lin, Zhaojun; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao; Liu, Huan; Cheng, Aijie
刊名	SUPERLATTICES AND MICROSTRUCTURES
	2018
卷号	113页码:160-168
关键词	AIGaN/AIN/GaN HFETs 2DEG density distribution Passivation Polarization Coulomb field scattering
DOI	10.1016/j.spmi.2017.10.035
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4566841
专题	山东大学
作者单位	1.Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China. 2.Hebei Semicond Res Inst,
推荐引用方式 GB/T 7714	Fu, Chen,Lin, Zhaojun,Cui, Peng,et al. A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors[J]. SUPERLATTICES AND MICROSTRUCTURES,2018,113:160-168.
APA	Fu, Chen.,Lin, Zhaojun.,Cui, Peng.,Lv, Yuanjie.,Zhou, Yang.,...&Cheng, Aijie.(2018).A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors.SUPERLATTICES AND MICROSTRUCTURES,113,160-168.
MLA	Fu, Chen,et al."A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors".SUPERLATTICES AND MICROSTRUCTURES 113(2018):160-168.

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