×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [42]
内容类型
期刊论文 [33]
会议论文 [9]
发表日期
2011 [1]
2009 [1]
2007 [1]
2006 [5]
2005 [1]
2003 [8]
更多...
学科主题
半导体材料 [42]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共42条,第1-10条
帮助
限定条件
学科主题:半导体材料
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method
期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:
Song HP
;
Wei HY
;
Li CM
;
Jiao CM
收藏
  |  
浏览/下载:65/4
  |  
提交时间:2011/07/05
CATHODOLUMINESCENCE CHARACTERIZATION
GALLIUM NITRIDE
STRESSES
LAYERS
HETEROSTRUCTURE
DEPOSITION
CONSTANTS
MECHANISM
SAPPHIRE
STRAIN
Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy
期刊论文
applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720
Zhang YJ
;
Chang BK
;
Yang Z
;
Niu J
;
Xiong YJ
;
Shi F
;
Guo H
;
Zeng YP
收藏
  |  
浏览/下载:65/25
  |  
提交时间:2010/03/08
GAAS PHOTOCATHODES
GALLIUM-ARSENIDE
ALXGA1-XAS
DIFFUSION
SURFACE
ENERGY
Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer
期刊论文
applied surface science, 2007, 卷号: 253, 期号: 18, 页码: 7423-7428
作者:
Duan RF
;
Wei TB
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/03/29
GaN
MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198
Jiao YH (Jiao Y. H.)
;
Wu J (Wu J.)
;
Xu B (Xu B.)
;
Jin P (Jin P.)
;
Hu LJ (Hu L. J.)
;
Liang LY (Liang L. Y.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/04/11
metamorphic
long wavelength
quantum dots
molecular beam epitaxy
MOLECULAR-BEAM EPITAXY
CHEMICAL-VAPOR-DEPOSITION
1.3 MU-M
GAAS
EMISSION
RANGE
ISLANDS
ARRAYS
LASERS
Investigation on Fe, Mn, Zn, Cu, Pb and Cd fractions in the natural surface coatings sampled and surficial sediments collected in the Songhua River, China
期刊论文
journal of environmental sciences, 2006, 卷号: 18, 期号: 6, 页码: 1193-1198
Guo Shuhai
;
Wang Xiaoli
;
Li Yu
;
Chen Jiejiang
;
Yang Juncheng
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/23
Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs
期刊论文
chinese physics, 2006, 卷号: 15, 期号: 11, 页码: 2735-2741
Li DL (Li Dong-Lin)
;
Zeng YP (Zeng Yi-Ping)
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2010/04/11
two-dimensional electron gas
high electron mobility transistor
self-consistent calculation
InAlAs/InGaAs heterostructure
CHARGE CONTROL MODEL
ELECTRON-MOBILITY TRANSISTORS
PSEUDOMORPHIC INGAAS HEMT
FIELD-EFFECT TRANSISTOR
QUANTUM-WELL
ALGAAS/INGAAS PHEMTS
GATE RECESS
HIGH-SPEED
HETEROJUNCTION
CHANNEL
Temperature dependence of surface quantum dots grown under frequent growth interruption
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 207-210
作者:
Jin P
;
Xu B
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/04/11
growth interruption
in segregation
surface oxide
molecular beam epitaxy
quantum dots
MOLECULAR-BEAM EPITAXY
GAAS
PHOTOLUMINESCENCE
LAYER
SHAPE
SIZE
Influence of dislocation stress field on distribution of quantum dots
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:
Xu B
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/04/11
stress
surface structure
semiconducting III-V materials
MOLECULAR-BEAM EPITAXY
STRAIN
THICKNESS
Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition
期刊论文
applied physics a-materials science & processing, 2005, 卷号: 80, 期号: 1, 页码: 141-144
Chen DJ
;
Shen B
;
Bi ZX
;
Zhang KX
;
Gu SL
;
Zhang R
;
Shi, Y
;
Zheng YD
;
Sun XH
;
Wan SK
;
Wang ZG
收藏
  |  
浏览/下载:117/41
  |  
提交时间:2010/03/09
MOLECULAR-BEAM EPITAXY
Controllable growth of semiconductor nanometer structures
期刊论文
microelectronics journal, 2003, 卷号: 34, 期号: 5-8, 页码: 379-382
Wang ZG
;
Wu J
收藏
  |  
浏览/下载:289/9
  |  
提交时间:2010/08/12
molecular beam epitaxy
nanostructures
INAS QUANTUM DOTS
SELF-ORGANIZATION
MONOLAYER COVERAGE
DENSITY
GAAS
ISLANDS
INP(001)
EPITAXY
©版权所有 ©2017 CSpace - Powered by
CSpace