Influence of dislocation stress field on distribution of quantum dots

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	Influence of dislocation stress field on distribution of quantum dots
	Xu B
刊名	physica e-low-dimensional systems & nanostructures
	2006
卷号	33 期号:1 页码:130-133
关键词	stress surface structure semiconducting III-V materials MOLECULAR-BEAM EPITAXY STRAIN THICKNESS
ISSN号	1386-9477
通讯作者	zhang, cl, chinese acad sci, inst semicond, lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: zhangchl@red.semi.ac.cn
中文摘要	inas quantum dots (qds) were grown on in0.15ga0.85as strained layers by molecular beam epitaxy on gaas (0 0 1) substrates. atomic force microscopy and transmission electron microscopy study have indicated that in0.15ga0.85as ridges and inas qds formed at the inclined upside of interface misfit dislocations (mds). by testifying the mds are mixed 60 degrees dislocations and calculating the surface stress over them when they are 12-180 nm below the surface, we found the qds prefer nucleating on the side with tensile stress of the mds and this explained why the ordering of qds is weak when the ingaas layer is relatively thick. (c) 2006 elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10578]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B. Influence of dislocation stress field on distribution of quantum dots[J]. physica e-low-dimensional systems & nanostructures,2006,33(1):130-133.
APA	Xu B.(2006).Influence of dislocation stress field on distribution of quantum dots.physica e-low-dimensional systems & nanostructures,33(1),130-133.
MLA	Xu B."Influence of dislocation stress field on distribution of quantum dots".physica e-low-dimensional systems & nanostructures 33.1(2006):130-133.