Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition
Chen DJ ; Shen B ; Bi ZX ; Zhang KX ; Gu SL ; Zhang R ; Shi, Y ; Zheng YD ; Sun XH ; Wan SK ; Wang ZG
刊名applied physics a-materials science & processing
2005
卷号80期号:1页码:141-144
关键词MOLECULAR-BEAM EPITAXY
ISSN号0947-8396
通讯作者shen, b, nanjing univ, natl lab solid state microstruct, nanjing 210093, peoples r china. 电子邮箱地址: bshen@netra.nju.edu.cn
中文摘要the gan-rich side of ganp ternary alloys has been successfully synthesized by light-radiation heating and low-pressure metal-organic chemical vapor deposition. x-ray diffraction (xrd) rocking curves show that the ( 0002) peak of ganp shifts to a smaller angle with increasing p content. from the ganp photoluminescence (pl) spectra, the red shifts from the band-edge emission of gan are determined to be 73, 78 and 100 mev, respectively, in the ganp alloys with the p contents of 1.5%, 5.5% and 7.5%. no pl peak or xrd peak related to gap is observed, indicating that phase separation induced by the short-range distribution of gap-rich regions in the ganp layer has been effectively suppressed. the phase-separation suppression in the ganp layer is associated with the high growth rate and the quick cooling rate under the given growth conditions, which can efficiently restrain the accumulation of p atoms in the ganp layer.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-03-09
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/7908]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Chen DJ,Shen B,Bi ZX,et al. Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition[J]. applied physics a-materials science & processing,2005,80(1):141-144.
APA Chen DJ.,Shen B.,Bi ZX.,Zhang KX.,Gu SL.,...&Wang ZG.(2005).Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition.applied physics a-materials science & processing,80(1),141-144.
MLA Chen DJ,et al."Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition".applied physics a-materials science & processing 80.1(2005):141-144.
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