Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs

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	Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs
	Li DL (Li Dong-Lin) ; Zeng YP (Zeng Yi-Ping)
刊名	chinese physics
	2006
卷号	15 期号:11 页码:2735-2741
关键词	two-dimensional electron gas high electron mobility transistor self-consistent calculation InAlAs/InGaAs heterostructure CHARGE CONTROL MODEL ELECTRON-MOBILITY TRANSISTORS PSEUDOMORPHIC INGAAS HEMT FIELD-EFFECT TRANSISTOR QUANTUM-WELL ALGAAS/INGAAS PHEMTS GATE RECESS HIGH-SPEED HETEROJUNCTION CHANNEL
ISSN号	1009-1963
通讯作者	li, dl, chinese acad sci, inst semicond, novel mat lab, beijing 100083, peoples r china. e-mail: ldl@red.semi.ac.cn
中文摘要	we have carried out a theoretical study of double-delta-doped inalas/ingaas/inp high electron mobility transistor (hemt) by means of the finite differential method. the electronic states in the quantum well of the hemt are calculated self-consistently. instead of boundary conditions, initial conditions are used to solve the poisson equation. the concentration of two-dimensional electron gas (2deg) and its distribution in the hemt have been obtained. by changing the doping density of upper and lower impurity layers we find that the 2deg concentration confined in the channel is greatly affected by these two doping layers. but the electrons depleted by the schottky contact are hardly affected by the lower impurity layer. it is only related to the doping density of upper impurity layer. this means that we can deal with the doping concentrations of the two impurity layers and optimize them separately. considering the sheet concentration and the mobility of the electrons in the channel, the optimized doping densities are found to be 5 x 10(12) and 3 x 10(12) cm(-2) for the upper and lower impurity layers, respectively, in the double-delta-doped inalas/ingaas/inp hemts.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10264]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li DL ,Zeng YP . Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs[J]. chinese physics,2006,15(11):2735-2741.
APA	Li DL ,&Zeng YP .(2006).Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs.chinese physics,15(11),2735-2741.
MLA	Li DL ,et al."Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs".chinese physics 15.11(2006):2735-2741.