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CORC

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Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging 期刊论文
applied physics letters, 2011, 卷号: 99, 期号: 11, 页码: 113115
Zhu JH; Ning JQ; Zheng CC; Xu SJ; Zhang SM; Yang H
收藏  |  浏览/下载：70/0  |  提交时间：2012/02/06
Improved performance of UV-LED by p-AlGaN with graded composition 期刊论文
physica status solidi(c) current topics in solid state physics, 2011, 卷号: 8, 期号: 2, 页码: 461-463
Yan, Jianchang; Wang, Junxi; Cong, Peipei; Sun, Lili; Liu, Naixin; Liu, Zhe; Zhao, Chao; Li, Jinmin
收藏  |  浏览/下载：44/0  |  提交时间：2012/06/14
A practical route towards fabricating GaN nanowire arrays 期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 19, 页码: 5929-5935
Liu, JQ; Huang, J; Gong, XJ; Wang, JF; Xu, K; Qiu, YX; Cai, DM; Zhou, TF; Ren, GQ; Yang, H
收藏  |  浏览/下载：26/0  |  提交时间：2012/02/06
Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 1, 页码: article no.18503
作者:  Dong Z;  Huang BJ
收藏  |  浏览/下载：50/2  |  提交时间：2011/07/05
Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 289-292
Cai LE; Zhang BP; Zhang JY; Wu CM; Jiang F; Hu XL; Chen M; Wang QM
收藏  |  浏览/下载：43/1  |  提交时间：2011/07/05
DIODES  
AlGaInP LED with surface structure of two-dimensional photonic crystal 期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 11, 页码: 8083-8087
Chen YX (Chen Yi-Xin); Zheng WH (Zheng Wan-Hua); Chen W (Chen Wei); Chen LH (Chen Liang-Hui); Tang YD (Tang Yi-Dan); Shen GD (Shen Guang-Di)
收藏  |  浏览/下载：33/0  |  提交时间：2010/12/27
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307
作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ
收藏  |  浏览/下载：107/3  |  提交时间：2010/04/05
Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 23, 页码: article no.233304
Ran GZ; Jiang DF; Kan Q; Chen HD
收藏  |  浏览/下载：45/3  |  提交时间：2011/07/05
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS
收藏  |  浏览/下载：146/11  |  提交时间：2010/04/04
Mechanism on Effect of Surface Plasmons Coupling with InGaN/GaN Quantum Wells: Enhancement and Suppression of Photoluminescence Intensity 期刊论文
applied physics express, 2010, 卷号: 3, 期号: 7, 页码: art. no. 072001
Huang ZL (Huang Zengli); Wang JF (Wang Jianfeng); Liu ZH (Liu Zhenghui); Xu K (Xu Ke); Yang H (Yang Hui); Cao B (Cao Bing); Han Q (Han Qin); Zhang GJ (Zhang Guiju); Wang CH (Wang Chinhua)
收藏  |  浏览/下载：53/0  |  提交时间：2010/08/17

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