Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology

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	Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology
	Dong Z; Huang BJ
刊名	chinese physics b
	2011
卷号	20 期号:1 页码:article no.18503
关键词	optoelectronic integrated circuit complementary metal-oxide-semiconductor technology silicon-based light emitting device electroluminescence AVALANCHE BREAKDOWN PHOTON-EMISSION CURRENT-DENSITY DIODES MODEL ELECTROLUMINESCENCE SUPERLATTICES EFFICIENCY JUNCTIONS LEDS
ISSN号	1674-1056
通讯作者	wang, w, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. wangweiww33@semi.ac.cn
学科主题	光电子学
收录类别	SCI
资助信息	national natural science foundation of china [60536030, 61036002, 60776024, 60877035, 61036009]; national high technology research and development program of china [2007aa04z329, 2007aa04z254]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	a three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 mu m complementary metal-oxide-semiconductor technology. this device is capable of versatile working modes: it can emit visible to near infra-red (nir) light (the spectrum ranges from 500 nm to 1000 nm) in reverse bias avalanche breakdown mode with working voltage between 8.35 v-12 v and emit nir light (the spectrum ranges from 900 nm to 1300 nm) in the forward injection mode with working voltage below 2 v. an apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. furthermore, when the gate oxide is broken down, nir light is emitted from the polysilicon/oxide/silicon structure. optoelectronic characteristics of the device working in different modes are measured and compared. the mechanisms behind these different emissions are explored.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20993]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Dong Z,Huang BJ. Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology[J]. chinese physics b,2011,20(1):article no.18503.
APA	Dong Z,&Huang BJ.(2011).Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology.chinese physics b,20(1),article no.18503.
MLA	Dong Z,et al."Multifunctional silicon-based light emitting device in standard complementary metal-oxide-semiconductor technology".chinese physics b 20.1(2011):article no.18503.