Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

CORC > 半导体研究所 > 中国科学院半导体研究所 > 集成光电子学国家重点实验室

	Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
	Zhang SM; Wang LJ; Wang YT; Yang H; Wang LJ; Zhu JH; Jiang DS; Zhu JJ; Yang H; Zhao DG
刊名	chinese physics b
	2010
卷号	19 期号:1 页码:art. no. 017307
关键词	GaN light emitting diode surface treatment leakage current THREADING DISLOCATION DENSITIES LAYERS NI/AU LEDS
通讯作者	zhang, sm, chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china. e-mail address: smzhang@red.semi.ac.cn
合作状况	其它
英文摘要	to form low-resistance ohmic contact to p-type gan, ingan/gan multiple quantum well light emitting diode wafers are treated with boiled aqua regia prior to ni/au (5 nm/5 nm) film deposition. the surface morphology of wafers and the current-voltage characteristics of fabricated light emitting diode devices are investigated. it is shown that surface treatment with boiled aqua regia could effectively remove oxide from the surface of the p-gan layer, and reveal defect-pits whose density is almost the same as the screw dislocation density estimated by x-ray rocking curve measurement. it suggests that the metal atoms of the ni/au transparent electrode of light emitting diode devices may diffuse into the p-gan layer along threading dislocation lines and form additional leakage current channels. therefore, the surface treatment time with boiled aqua regia should not be too long so as to avoid the increase of threading dislocation-induced leakage current and the degradation of electrical properties of light emitting diodes; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-05t06:09:58z no. of bitstreams: 1 60.pdf: 715973 bytes, checksum: afe835246f69fcc56ba5e16a3c4820f6 (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-05t06:48:43z (gmt) no. of bitstreams: 1 60.pdf: 715973 bytes, checksum: afe835246f69fcc56ba5e16a3c4820f6 (md5); made available in dspace on 2010-04-05t06:48:43z (gmt). no. of bitstreams: 1 60.pdf: 715973 bytes, checksum: afe835246f69fcc56ba5e16a3c4820f6 (md5) previous issue date: 2010; national natural science foundation of china 60776047 60836003 60476021 60576003; 其它
学科主题	光电子学
收录类别	SCI
资助信息	national natural science foundation of china 60776047 60836003 60476021 60576003
语种	英语
公开日期	2010-04-05 ; 2010-10-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10208]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Zhang SM,Wang LJ,Wang YT,et al. Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices[J]. chinese physics b,2010,19(1):art. no. 017307.
APA	Zhang SM.,Wang LJ.,Wang YT.,Yang H.,Wang LJ.,...&Zhao DG.(2010).Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices.chinese physics b,19(1),art. no. 017307.
MLA	Zhang SM,et al."Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices".chinese physics b 19.1(2010):art. no. 017307.