已选(0)清除
条数/页: 排序方式:
|
| Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏  |  浏览/下载:52/10  |  提交时间:2011/07/05
|
| Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks 期刊论文 applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908 Zheng XH (Zheng X. H.); Huang AP (Huang A. P.); Xiao ZS (Xiao Z. S.); Yang ZC (Yang Z. C.); Wang M (Wang M.); Zhang XW (Zhang X. W.); Wang WW (Wang W. W.); Chu PK (Chu Paul K.) 收藏  |  浏览/下载:10/0  |  提交时间:2010/11/14
|
| Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文 applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720 Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP 收藏  |  浏览/下载:65/25  |  提交时间:2010/03/08
|
| Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells 期刊论文 journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 155-160 作者: Jiang DS 收藏  |  浏览/下载:55/0  |  提交时间:2010/08/12
|
| Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文 journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369 Dong HW; Zhao YW; Zeng YP; Jiao JH; Li JM; Lin LY 收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
|
| Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文 journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7 Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY 收藏  |  浏览/下载:351/16  |  提交时间:2010/08/12
|
| Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文 journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141 作者: Xu B 收藏  |  浏览/下载:44/0  |  提交时间:2010/08/12
|
| Carbonization process of Si(100) by ion-beam bombardment 期刊论文 journal of crystal growth, 2001, 卷号: 233, 期号: 3, 页码: 446-450 Liao MY; Chai CL; Yao ZY; Yang SY; Liu ZK; Wang ZG 收藏  |  浏览/下载:83/8  |  提交时间:2010/08/12
|
| Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions 期刊论文 journal of crystal growth, 2000, 卷号: 213, 期号: 1-2, 页码: 40-50 Hayakawa Y; Okano Y; Hirata A; Imaishi N; Kumagiri Y; Zhong X; Xie X; Yuan B; Wu F; Liu H; Yamaguchi T; Kumagawa M 收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
|
| Effect of rapid thermal annealing on InGaAs/GaAs quantum wells 期刊论文 journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 352-355 Zhuang QD; Li JM; Zeng YP; Yoon SF; Zheng HQ; Kong MY; Lin LY 收藏  |  浏览/下载:61/0  |  提交时间:2010/08/12
|