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Ordered inas nanodots formed on the patterned gaas substrate by molecular beam epitaxy 期刊论文
Materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
作者:  Jin, Lan;  Zhou, Huiying;  Qu, Shengchun;  Wang, Zhanguo
收藏  |  浏览/下载：99/0  |  提交时间：2019/05/12
Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation 期刊论文
Journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Zhou, Huiying;  Qu, Shengchun;  Jin, Peng;  Xu, Bo;  Ye, Xiaoling
收藏  |  浏览/下载：39/0  |  提交时间：2019/05/12
Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 108-113
Jin, L; Zhou, HY; Qu, SC; Wang, ZG
收藏  |  浏览/下载：91/0  |  提交时间：2012/02/06
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:  Xu B;  Jin P;  Ye XL
收藏  |  浏览/下载：63/1  |  提交时间：2011/07/05
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载：88/41  |  提交时间：2010/03/08
Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7462-7466
Hu, WG; Liu, XL; Jiao, CM; Wei, HY; Kang, TT; Zhang, PF; Zhang, RQ; Fan, HB; Zhu, QS
收藏  |  浏览/下载：54/4  |  提交时间：2010/03/08
Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 23, 页码: 5846-5850
Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Ren YY (Ren Y. Y.); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：105/0  |  提交时间：2010/04/11
Thermal oxidation behaviors of gan powders 期刊论文
Materials letters, 2005, 卷号: 59, 期号: 29-30, 页码: 4041-4043
作者:  Xiao, HD;  Ma, HL;  Xue, CS;  Zhuang, HZ;  Ma, J
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/12
The growth morphologies of GaN layer on Si(111) substrate 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 91-98
Lu YA; Liu XL; Lu DC; Yuan HR; Hu GQ; Wang XH; Wang ZG; Duan XF
收藏  |  浏览/下载：21/0  |  提交时间：2010/08/12
Statistical investigation on morphology development of gallium nitride in initial growth stage 期刊论文
journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 77-84
Yuan HR; Lu DC; Liu XL; Chen Z; Han P; Wang XH; Wang D
收藏  |  浏览/下载：76/3  |  提交时间：2010/08/12

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