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	Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation
	Zhou, Huiying1,2,3; Qu, Shengchun1; Jin, Peng1; Xu, Bo1; Ye, Xiaoling1; Liu, Junpeng1; Wang, Zhanguo1
刊名	Journal of crystal growth
	2011-03-01
卷号	318期号:1页码:572-575
关键词	Atom force microscopy Nanostructures Molecular-beam epitaxy Nanomaterials Semiconducting gallium arsenide
ISSN号	0022-0248
DOI	10.1016/j.jcrysgro.2010.10.176
通讯作者	Qu, shengchun(qsc@semi.ac)
英文摘要	Ordered in(ga)as nanostructures on gaas are emerging as an important new class of optoelectronic and electronic materials. in this work, patterned gaas (1 0 0) substrates were fabricated by masked indium ion implantation and subsequent annealing under arsenic capping. anodic aluminum oxide templates are used as masks for indium ion implantation on gaas substrate. the masked indium ion implantation substrate is used as a strain pattern for the nucleation of three-dimensional in(ga)as islands on the gaas substrate. molecular-beam epitaxy growth of self-assembled in(ga)as/gaas quantum dots on the patterned gaas (1 0 0) substrates has been studied. by adjusting the growth conditions, surprising alignment and pronounced round coalescence of dots under specific condition are realized. an explanation for the role of patterned substrate in determining the shape of the nanostructure is proposed. our approach provides a general yet versatile route towards the creation of a range of nanostructure materials. (c) 2010 elsevier b.v. all rights reserved.
WOS关键词	QUANTUM-DOTS ; ANODIC ALUMINA ; ARRAYS ; PLACEMENT ; INAS
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000289653900121
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428371
专题	半导体研究所
通讯作者	Qu, Shengchun
作者单位	1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Cent S Univ Forestry & Technol, Comp & Informat Engn Sch, Changsha 410004, Hunan, Peoples R China 3.Hunan Normal Univ, Dept Phys, Minist Educ, Key Lab Low Dimens Quantum Struct & Quantum Contr, Changsha 410081, Hunan, Peoples R China
推荐引用方式 GB/T 7714	Zhou, Huiying,Qu, Shengchun,Jin, Peng,et al. Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation[J]. Journal of crystal growth,2011,318(1):572-575.
APA	Zhou, Huiying.,Qu, Shengchun.,Jin, Peng.,Xu, Bo.,Ye, Xiaoling.,...&Wang, Zhanguo.(2011).Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation.Journal of crystal growth,318(1),572-575.
MLA	Zhou, Huiying,et al."Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation".Journal of crystal growth 318.1(2011):572-575.

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