The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

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	The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
	Yang H; Jiang DS; Zhao DG; Zhang SM; Yang H; Wang H; Wang H; Wang YT; Zhu JJ
刊名	semiconductor science and technology
	2009
卷号	24 期号:5 页码:art. no. 055001
关键词	MOLECULAR-BEAM EPITAXY ELECTRON-TRANSPORT BAND-GAP FILMS SAPPHIRE
ISSN号	0268-1242
通讯作者	wang h chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china. e-mail address: wangh@red.semi.ac.cn
中文摘要	the effects of growth temperature and v/iii ratio on the inn initial nucleation of islands on the gan (0 0 0 1) surface were investigated. it is found that inn nuclei density increases with decreasing growth temperature between 375 and 525 degrees c. at lower growth temperatures, inn thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the inn islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. at a given growth temperature of 500 degrees c, a controllable density and size of separated inn islands can be achieved by adjusting the v/iii ratio. the larger islands lead to fewer defects when they are coalesced. comparatively, the electrical properties of the films grown under higher v/iii ratio are improved.
学科主题	光电子学
收录类别	SCI
资助信息	national natural science fund of china 60506001 6057600360776047national basic research program 2007cb936700 this work was supported by the national natural science fund of china (grant nos. 60506001, 60576003 and 60776047) and national basic research program (2007cb936700).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7201]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang H,Jiang DS,Zhao DG,et al. The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD[J]. semiconductor science and technology,2009,24(5):art. no. 055001.
APA	Yang H.,Jiang DS.,Zhao DG.,Zhang SM.,Yang H.,...&Zhu JJ.(2009).The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD.semiconductor science and technology,24(5),art. no. 055001.
MLA	Yang H,et al."The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD".semiconductor science and technology 24.5(2009):art. no. 055001.