Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs

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	Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs
	Jiao YH (Jiao Y. H.) ; Wu J (Wu J.) ; Xu B (Xu B.) ; Jin P (Jin P.) ; Hu LJ (Hu L. J.) ; Liang LY (Liang L. Y.) ; Ren YY (Ren Y. Y.) ; Wang ZG (Wang Z. G.)
刊名	nanotechnology
	2006
卷号	17 期号:23 页码:5846-5850
关键词	CHEMICAL-VAPOR-DEPOSITION FIELD-EFFECT TRANSISTORS QUANTUM-DOTS SELF-ORGANIZATION ISLANDS NANOSTRUCTURES SUPERLATTICES GROWTH SURFACE GAAS(100)
ISSN号	0957-4484
通讯作者	jiao, yh, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china.
中文摘要	periodical alignment of the inas dots along the < 100 > and < 110 > directions was observed on an elastically relaxed ingaas buffer layer grown at 500 and 450 degrees c, respectively, on the vicinal gaas(001) substrate. due to alignment along these directions, the inas dots were arranged into a quasi-two-dimensional hexagonal lattice. such a periodical arrangement of inas dots may be explained in terms of modulation in strain as well as composition along [110] as observed by using cross-sectional transmission electron microscopy.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10238]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jiao YH ,Wu J ,Xu B ,et al. Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs[J]. nanotechnology,2006,17(23):5846-5850.
APA	Jiao YH .,Wu J .,Xu B .,Jin P .,Hu LJ .,...&Wang ZG .(2006).Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs.nanotechnology,17(23),5846-5850.
MLA	Jiao YH ,et al."Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs".nanotechnology 17.23(2006):5846-5850.