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Growth and properties of Pr3+-doped NaGd(MoO4)2 single crystal: A promising InGaN laser-diode pumped orange-red laser crystal 期刊论文
JOURNAL OF LUMINESCENCE, 2022, 卷号: 249
作者:  Ren, Hao;  Li, Hongyuan;  Zou, Yong;  Deng, Hengyang;  Peng, Ziming
收藏  |  浏览/下载：14/0  |  提交时间：2022/12/22
Interfacial modulation and plasmonic effect mediated high-brightness green light sources in a single Ga-doped ZnO microwire based heterojunction 期刊论文
Crystengcomm, 2022, 卷号: 24, 期号: 38, 页码: 6642-6653
作者:  X. J. Liu;  M. S. Liu;  R. D. Zhu;  B. H. Li;  P. Wan
收藏  |  浏览/下载：4/0  |  提交时间：2023/06/14
High-concentration Er3+ ion singly doped GaTaO4 single crystal for promising all-solid-state green laser and solid-state lighting applications 期刊论文
CRYSTENGCOMM, 2021
作者:  Ding, Shoujun;  Ren, Hao;  Liu, Wenpeng;  He, Aifeng;  Tang, Xubing
收藏  |  浏览/下载：36/0  |  提交时间：2022/02/14
Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 卷号: 36, 期号: 9, 页码: 7
作者:  Wang, Ying-Zhe;  Zheng, Xue-Feng;  Lv, Ling;  Cao, Yan-Rong;  Wang, Xiao-Hu
收藏  |  浏览/下载：18/0  |  提交时间：2021/12/08
Ultra-broad absorption band of a Dy3+-doped Gd3Sc2Al3O12 garnet crystal at around 450 nm: a potential crystal for InGaN LD-pumped all-solid-state yellow lasers 期刊论文
CRYSTENGCOMM, 2021
作者:  Ding, Shoujun;  Li, Hongyuan;  Ren, Hao;  Tong, Ye;  Liu, Wenpeng
收藏  |  浏览/下载：14/0  |  提交时间：2021/08/30
The influence of material quality of lower InGaN waveguide layer on the performance of GaN-based laser diodes 期刊论文
APPLIED SURFACE SCIENCE, 2021, 卷号: 570, 页码: 151132
作者:  Wang, Xiao-Wei;   Liang, Feng;   Zhao, De-Gang;   Chen, Ping;   Liu, Zong-Shun;   Yang, Jing
收藏  |  浏览/下载：10/0  |  提交时间：2022/03/23
Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment 期刊论文
RESULTS IN PHYSICS, 2021, 卷号: 31, 页码: 105057
作者:  Hou, Yufei;   Liang, Feng;   Zhao, Degang;   Liu, Zongshun;   Chen, Ping;   Yang, Jing
收藏  |  浏览/下载：12/0  |  提交时间：2022/03/23
Role of hydrogen treatment during the material growth in improving the photoluminescence properties of InGaN/GaN multiple quantum wells 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 卷号: 874, 页码: 159851
作者:  Hou, Yufei;   Liang, Feng;   Zhao, Degang;   Chen, Ping;   Yang, Jing;   Liu, Zongshun
收藏  |  浏览/下载：26/0  |  提交时间：2022/03/28
Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures 期刊论文
Journal of Materials Science, 2021, 卷号: 56, 期号: 2, 页码: 1481-1491
作者:  M. Tian;  C. Ma;  T. Lin;  J. Liu;  D. N. Talwar
收藏  |  浏览/下载：7/0  |  提交时间：2022/06/13
Uniting a III-Nitride Transmitter, Waveguide, Modulator, and Receiver on a Single Chip 期刊论文
Advanced Engineering Materials, 2021, 卷号: 23, 期号: 12
作者:  M. Xie;  Y. Jiang;  X. Gao;  W. Cai;  J. Yuan
收藏  |  浏览/下载：2/0  |  提交时间：2022/06/13

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