High-concentration Er3+ ion singly doped GaTaO4 single crystal for promising all-solid-state green laser and solid-state lighting applications

doi:10.1039/d1ce01333e

	High-concentration Er3+ ion singly doped GaTaO4 single crystal for promising all-solid-state green laser and solid-state lighting applications
	Ding, Shoujun 1,3; Ren, Hao 1; Liu, Wenpeng 3; He, Aifeng 2; Tang, Xubing 1; Zhang, Qingli 3
刊名	CRYSTENGCOMM
	2021-12-11
DOI	10.1039/d1ce01333e
通讯作者	Ding, Shoujun(sjding@ahut.edu.cn)
英文摘要	Exploring new visible laser crystals is of great significance to the development of diode pumped all-solid-state visible lasers and solid-state lighting. In this work, a high concentration (10 at%) Er3+ ion singly doped GdTaO4 single crystal with high quality as a promising visible laser crystal was grown successfully by the Czochralski method. The structure of the crystal was determined to be a monoclinic structure with the space group C2/c by powder and single-crystal X-ray diffraction characterization techniques. The absorption and blue and violet light excited emission spectra of the crystal were obtained and analyzed. A strong emission band centered at 555 nm was observed under excitation at both 450 nm and 377 nm. The absorption cross-section at 450 nm and emission cross-section at 555 nm were calculated to be 4.60 x 10(-21) and 4.57 x 10(-21) cm(2), respectively, which are comparable to those of other promising InGaN diode pumped visible laser crystals doped with rare earth ions (Er3+, Dy3+ and Pr3+). Under 450 nm or 355 nm laser excitation, the crystal emits strong green fluorescence. A 380 nm LED chip pumped prototype device was fabricated using the crystal, which exhibited green light under the driving current. Besides, the green and red upconversion luminescence of Er3+ in the GdTaO4 single crystal was found to be a two-photon process under the excitation of a 980 nm laser. All these results strongly recommend that the 10 at% Er3+ ion doped GdTaO4 crystal is very promising for diode pumped green lasers and probably useful for solid-state lighting.
资助项目	Natural Science Foundation of Anhui Province[2008085QF313] ; University Natural Science Research Project of Anhui Province, China[KJ2019ZD06] ; Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy[JJNY202001]
WOS关键词	SPECTROSCOPIC PROPERTIES ; UP-CONVERSION ; GROWTH ; EMISSION ; NM ; OPERATION ; PERFORMANCE ; GENERATION ; EXCITATION ; DEFECTS
WOS研究方向	Chemistry ; Crystallography
语种	英语
出版者	ROYAL SOC CHEMISTRY
WOS记录号	WOS:000738148300001
资助机构	Natural Science Foundation of Anhui Province ; University Natural Science Research Project of Anhui Province, China ; Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/127181]
专题	中国科学院合肥物质科学研究院
通讯作者	Ding, Shoujun
作者单位	1.Anhui Univ Technol, Sch Sci & Engn Math & Phys, Maanshan 243002, Anhui, Peoples R China 2.Shaanxi Appl Phys & Chem Res Inst, Key Lab Appl Phys & Chem, Xian 710061, Shaanxi, Peoples R China 3.Chinese Acad Sci, Anhui Inst Opt & Fine Mech, Hefei 230031, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Ding, Shoujun,Ren, Hao,Liu, Wenpeng,et al. High-concentration Er3+ ion singly doped GaTaO4 single crystal for promising all-solid-state green laser and solid-state lighting applications[J]. CRYSTENGCOMM,2021.
APA	Ding, Shoujun,Ren, Hao,Liu, Wenpeng,He, Aifeng,Tang, Xubing,&Zhang, Qingli.(2021).High-concentration Er3+ ion singly doped GaTaO4 single crystal for promising all-solid-state green laser and solid-state lighting applications.CRYSTENGCOMM.
MLA	Ding, Shoujun,et al."High-concentration Er3+ ion singly doped GaTaO4 single crystal for promising all-solid-state green laser and solid-state lighting applications".CRYSTENGCOMM (2021).