Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment

	Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment
	Hou, Yufei; Liang, Feng; Zhao, Degang; Liu, Zongshun; Chen, Ping; Yang, Jing
刊名	RESULTS IN PHYSICS
	2021
卷号	31 页码:105057
公开日期	2021
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30750]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Hou, Yufei; Liang, Feng; Zhao, Degang; Liu, Zongshun; Chen, Ping; Yang, Jing. Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment[J]. RESULTS IN PHYSICS,2021,31:105057.
APA	Hou, Yufei; Liang, Feng; Zhao, Degang; Liu, Zongshun; Chen, Ping; Yang, Jing.(2021).Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment.RESULTS IN PHYSICS,31,105057.
MLA	Hou, Yufei; Liang, Feng; Zhao, Degang; Liu, Zongshun; Chen, Ping; Yang, Jing."Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment".RESULTS IN PHYSICS 31(2021):105057.