Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects

doi:10.1088/1361-6641/ac1b13

	Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects
	Wang, Ying-Zhe 1; Zheng, Xue-Feng 1; Lv, Ling 1; Cao, Yan-Rong 2; Wang, Xiao-Hu 1; Mao, Wei 1; Du, Ming 1; Hu, Pei-Pei 3; Li, Pei-Xian 4; Liu, Jie 3
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2021-09-01
卷号	36 期号:9 页码:7
关键词	UVA LED swift heavy ion irradiation degradation defect low frequency noise
ISSN号	0268-1242
DOI	10.1088/1361-6641/ac1b13
通讯作者	Zheng, Xue-Feng(xfzheng@mail.xidian.edu.cn) ; Lv, Ling(llv@xidian.edu.cn)
英文摘要	This work investigates the intrinsic degradation mechanism of InGaN/GaN UVA (320-400 nm) light emitting diodes (LEDs) after swift heavy ion irradiation from the defect aspect using temperature-dependent low frequency noise measurement. The UVA LEDs were exposed to 1423 MeV Ta ions with a fluence of 10(8)-10(10) ions cm(-2). The optical power decreases and the leakage current increases evidently after irradiation. The defect behaviors were characterized to analyze the degradation mechanism. It is indicated that the similar to 0.2 eV energy level defect decreases, and the defect with an energy level of about 0.65 eV increases with the increasing fluence, resulting in device degradation. Combining the defect energy level and the decreased yellow luminescence in the photoluminescence spectrum, the possible defect transform process is the newly created N interstitial atoms fill in the intrinsic V-Ga and form N-Ga after irradiation.
资助项目	National Natural Science Foundation of China[62104180] ; National Natural Science Foundation of China[61974115] ; National Natural Science Foundation of China[11690042] ; National Natural Science Foundation of China[61634005] ; National Natural Science Foundation of China[61974111] ; National Natural Science Foundation of China[12035019] ; National Natural Science Foundation of China[61904142] ; Natural Science Basic Research Plan in Shaanxi Province of China Program[2019ZDLGY16-03] ; Key Research and Development Program of Shaanxi[2020ZDLGY03-05] ; National Pre-research Foundation of China[31513020109]
WOS关键词	LOW-FREQUENCY NOISE ; YELLOW LUMINESCENCE ; ALGAN/GAN HEMTS ; 1/F NOISE ; RELIABILITY ; PERFORMANCE
WOS研究方向	Engineering ; Materials Science ; Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000688246900001
资助机构	National Natural Science Foundation of China ; Natural Science Basic Research Plan in Shaanxi Province of China Program ; Key Research and Development Program of Shaanxi ; National Pre-research Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/136372]
专题	中国科学院近代物理研究所
通讯作者	Zheng, Xue-Feng; Lv, Ling
作者单位	1.Xidian Univ, Key Lab Wide Bandgap Semicond Mat & Devices, Sch Microelect, Xian 710071, Peoples R China 2.Xidian Univ, Sch Mechanoelect Engn, Xian 710071, Peoples R China 3.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 4.Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China 5.Xidian Univ, Sch Phys & Optoelect Engn, Xian 710071, Peoples R China
推荐引用方式 GB/T 7714	Wang, Ying-Zhe,Zheng, Xue-Feng,Lv, Ling,et al. Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2021,36(9):7.
APA	Wang, Ying-Zhe.,Zheng, Xue-Feng.,Lv, Ling.,Cao, Yan-Rong.,Wang, Xiao-Hu.,...&Hao, Yue.(2021).Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,36(9),7.
MLA	Wang, Ying-Zhe,et al."Degradation mechanisms of InGaN/GaN UVA LEDs under swift heavy ion irradiation: role of defects".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 36.9(2021):7.