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| InGaN量子阱及薄膜材料特性研究 学位论文
北京: 中国科学院研究生院, 2018
作者: 刘炜
  收藏 | 浏览/下载：169/0 | 提交时间：2018/06/20
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| Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 44850
作者: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu
收藏 | 浏览/下载：23/0 | 提交时间：2018/11/30 |
| Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602
作者: J. YANG; D. G. ZHAO; D. S. JIANG; X. LI; F. LIANG
收藏 | 浏览/下载：23/0 | 提交时间：2018/11/30 |
| Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes 期刊论文
IEEE Photonics Journal, 2017, 卷号: 9, 期号: 2, 页码: 2300108
作者: Jing Yang; Degang Zhao; Desheng Jiang; Ping Chen; Jianjun Zhu
收藏 | 浏览/下载：28/0 | 提交时间：2018/11/30 |
| Increasing the indium incorporation efficiency during InGaN layer growth by suppressing the dissociation of NH3 期刊论文
Superlattices and Microstructures, 2017, 卷号: 102, 期号: 2017, 页码: 35-39
作者: J. Yang; D.G. Zhao; D.S. Jiang; P. Chen; J.J. Zhu
收藏 | 浏览/下载：18/0 | 提交时间：2018/11/30 |
| Comparative study on the InGaN multiple-quantum-well solar cells assisted by capacitance-voltage measurement with additional laser illumination 期刊论文
Journal of Alloys and Compounds, 2017, 卷号: 725, 期号: 2017, 页码: 1130-1135
作者: Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi
收藏 | 浏览/下载：30/0 | 提交时间：2018/07/11 |
| Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells 期刊论文
IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 卷号: 7, 期号: 4, 页码: 1017-1023
作者: Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Dongping Shi
收藏 | 浏览/下载：27/0 | 提交时间：2018/07/11 |
| Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
作者: X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN
收藏 | 浏览/下载：20/0 | 提交时间：2018/07/11 |
| New design of upper waveguide with unintentionally doped InGaN layer for InGaN-based laser diode 期刊论文
Optics and Laser Technology, 2017, 卷号: 97, 页码: 284–289
作者: Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu
收藏 | 浏览/下载：17/0 | 提交时间：2018/07/11 |
| Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
作者: P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li
收藏 | 浏览/下载：25/0 | 提交时间：2018/07/11 |
