Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes

	Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes
	P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li; J. Yang; J. J. Zhu; Z. S. Liu; X. J. Li; W. Liu
刊名	AIP Advances
	2017
卷号	7 页码:035103
学科主题	光电子学
公开日期	2018-07-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28781]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	P. Chen,D. G. Zhao,D. S. Jiang,et al. Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes[J]. AIP Advances,2017,7:035103.
APA	P. Chen.,D. G. Zhao.,D. S. Jiang.,H. Long.,M. Li.,...&H. Yang.(2017).Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes.AIP Advances,7,035103.
MLA	P. Chen,et al."Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes".AIP Advances 7(2017):035103.