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期刊论文 [73]
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Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs
期刊论文
MICROELECTRONICS RELIABILITY, 2023, 卷号: 149
作者:
Yu, Cheng-hao
;
Guo, Hao-min
;
Liu, Yan
;
Wu, Xiao-dong
;
Zhang, Li-long
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2023/11/10
Depletion-mode
Single-event burnout (SEB)
Single-event gate rupture
Design of DC Magnet Power Supply System for ITER Static Magnetic Field Test Facility
期刊论文
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2022
作者:
Deng, Xi
;
Jiang, Li
;
Huang, Ya
;
Gao, Ge
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2022/12/23
Inductors
Topology
Switches
Power supplies
Switching frequency
Harmonic analysis
Buck converters
Interleaving parallel buck converter
International Thermonuclear Experimental Reactor (ITER)
large output capability
multilevel
static magnetic field (SMF) test facility
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: 34, 页码: 2002-2006
作者:
Ren, Yu
;
Yang, Xu
;
Zhang, Fan
;
Wang, Fei
;
Tolbert, Leon M.
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  |  
浏览/下载:33/0
  |  
提交时间:2019/11/19
Gate drivers
Integrated circuit reliability
MOS-FET
Series connections
SiC MOSFET
Solid State Circuit Breaker
Voltage balancing
Wide band gap devices
Circuit arrangement and method for controlling and measuring a current in a charge element
专利
专利号: US20180331499A1, 申请日期: 2018-11-15, 公开日期: 2018-11-15
作者:
BELLINGRATH, THOMAS
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  |  
浏览/下载:12/0
  |  
提交时间:2019/12/31
Temperature Dependence of Dynamic Performance Characterization of 1.2 kV SiC Power MOSFETs compared with Si IGBTs for Wide Temperature Applications
期刊论文
IEEE Transactions on Power Electronics, 2018
作者:
Qi, Jinwei
;
Yang, Xu
;
Li, Xin
;
Tian, Kai
;
Mao, Zhangsong
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/11/19
Cryogenic temperatures
Dynamic resistance
High-efficiency power conversions
High-frequency applications
Power conversion systems
SiC MOSFET
Switching characterization
Temperature applications
Characterization of 1.2 kV 4H-SiC power MOSFETs and Si IGBTs at cryogenic and high temperatures
会议论文
作者:
Tian, Kai
;
Qi, Jinwei
;
Mao, Zhangsong
;
Yang, Song
;
Song, Wenjie
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/11/19
Cryogenic temperatures
High temperature
Interface traps
Switching characteristics
Switching performance
Transfer characteristics
Trench mosfets
Wide temperature ranges
Dynamic Performance of 4H-SiC Power MOSFETs and Si IGBTs over Wide Temperature Range
会议论文
作者:
Qi, Jinwei
;
Tian, Kai
;
Mao, Zhangsong
;
Yang, Song
;
Song, Wenjie
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/11/26
MOSFETs
dynamic on-resistance
silicon carbide (SiC)
cryogenic temperature
switching transient
Research on a 4000-V-Ultrahigh Input-Switched-Mode Power Supply Using Series-Connected MOSFETs
期刊论文
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 卷号: 33, 页码: 5995-6011
作者:
Chen, Xiliang
;
Chen, Wenjie
;
Yang, Xu
;
Han, Yaqiang
;
Hao, Xiang
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/11/26
ultrahigh input
Common-mode (CM) interference
voltage balance
series connected
An Integrated Gate Driver with Active Delay Control Method for Series Connected SiC MOSFETs
期刊论文
2018 IEEE 19th Workshop on Control and Modeling for Power Electronics, COMPEL 2018, 2018
作者:
Wang, Panrui
;
Gao, Feng
;
Jing, Yang
;
Hao, Quanrui
;
Li, Kejun
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/12/11
delay control
series connected
SiC MOSFET
voltage balance
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