Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs

doi:10.1016/j.microrel.2023.115227

	Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs
	Yu, Cheng-hao 3; Guo, Hao-min 3; Liu, Yan 3; Wu, Xiao-dong 3; Zhang, Li-long 3; Tan, Xin 3; Han, Yun-cheng 2; Ren, Lei 1,2
刊名	MICROELECTRONICS RELIABILITY
	2023-10-01
卷号	149
关键词	Depletion-mode Single-event burnout (SEB) Single-event gate rupture
ISSN号	0026-2714
DOI	10.1016/j.microrel.2023.115227
通讯作者	Guo, Hao-min(haomin.guo@hdu.edu.cn) ; Liu, Yan(ly0109@hdu.edu.cn)
英文摘要	This paper presents the 2-D numerical simulation results of the heavy-ion induced single-event burnout (SEB) and single event gate rupture (SEGR) in the depletion-mode gallium-oxide (Ga2O3) field-plated metal-oxide-semiconductor field-effect transistors (FP-MOSFETs). The employed simulation physics models and material parameters were validated by the basic electrical characteristics in experiments. The SEB sensitive region was proven to be from the gate edge to the drain edge of the structure. The SEB failure could result from the large number of mobile holes that diffused into the strong electric field to form a very large joule heat power to induce thermal failure. Meanwhile, the SEGR sensitive region overlapped with that of the SEB. The accumulated at the gate channel interface could produce a high-density hole pool that formed a large positive potential to induce an SEGR. Based on the simulations, a catastrophic SEB was triggered at a drain voltage of around 350 V, which was 46.4 % of breakdown voltage. Besides, a severe leakage current degradation could be estimated at about 175 V. However, for the SEGR performance, an SEGR could be triggered even at 0 V. Finally, the influences of the field plate extension length on SEB and SEGR were investigated that the SEB sensitive region and maximum electric field during SEGR could be both improved.
资助项目	National Natural Science Foundation of China[61904044] ; Anhui Provincial Key Research and Development Program[202104g0102007]
WOS关键词	PLANAR ; SEGR
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Physics
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:001076074900001
资助机构	National Natural Science Foundation of China ; Anhui Provincial Key Research and Development Program
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/132516]
专题	中国科学院合肥物质科学研究院
通讯作者	Guo, Hao-min; Liu, Yan
作者单位	1.Univ Sci & Technol China, Hefei 230026, Peoples R China 2.Chinese Acad Sci, Hefei Inst Phys Sci, Hefei 230031, Anhui, Peoples R China 3.Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Minist Educ, Hangzhou 310018, Peoples R China
推荐引用方式 GB/T 7714	Yu, Cheng-hao,Guo, Hao-min,Liu, Yan,et al. Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs[J]. MICROELECTRONICS RELIABILITY,2023,149.
APA	Yu, Cheng-hao.,Guo, Hao-min.,Liu, Yan.,Wu, Xiao-dong.,Zhang, Li-long.,...&Ren, Lei.(2023).Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs.MICROELECTRONICS RELIABILITY,149.
MLA	Yu, Cheng-hao,et al."Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs".MICROELECTRONICS RELIABILITY 149(2023).