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科研机构

北京大学 [35]

清华大学 [3]

新疆理化技术研究所 [2]

合肥物质科学研究院 [1]

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期刊论文 [28]

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浏览/检索结果: 共41条，第1-10条

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	Simulation study on single-event burnout in field-plated Ga2O3 MOSFETs 期刊论文 MICROELECTRONICS RELIABILITY, 2023, 卷号: 149 作者: Yu, Cheng-hao; Guo, Hao-min; Liu, Yan; Wu, Xiao-dong; Zhang, Li-long 收藏 \| 浏览/下载：11/0 \| 提交时间：2023/11/10 Depletion-mode Single-event burnout (SEB) Single-event gate rupture
	GIDL Challenge of GAA SNWT For Low Power Application 其他 2016-01-01 Ming Li; Jiewen Fan; Yuancheng Yang; Gong Chen; Ru Huang 收藏 \| 浏览/下载：7/0 \| 提交时间：2017/12/03 drain transistor junction overcome suppressed extremely modulated leakage overlap TCAD drain transistor junction overcome suppressed extremely modulated leakage overlap TCAD
	Resistive-Gate Field-Effect Transistor Exhibiting Steep Subthreshold Slope of 5mV /dec and High I_(ON)/I_(OFF) Ratio 其他 2016-01-01 Qianqian Huang; Zongwei Wang; Yue Pan; Yangyuan Wang; Ru Huang 收藏 \| 浏览/下载：4/0 \| 提交时间：2017/12/03 resistive electrically drain steep OFF ON Ratio dec and High I transistor operated resistive electrically drain steep OFF ON Ratio dec and High I transistor operated
	Insight Into Gate-Induced Drain Leakage in Silicon Nanowire Transistors 期刊论文 ieee电子器件汇刊, 2015 Fan, Jiewen; Li, Ming; Xu, Xiaoyan; Yang, Yuancheng; Xuan, Haoran; Huang, Ru 收藏 \| 浏览/下载：2/0 \| 提交时间：2015/11/10 Band-to-band tunneling (BTBT) CMOS technology gate-induced drain leakage (GIDL) power consumption silicon nanowire transistors (SNWTs) CMOS TECHNOLOGY MOSFET GIDL DEVICES DESIGN
	Carbon Nanotube Feedback-Gate Field-Effect Transistor: Suppressing Current Leakage and Increasing On/Off Ratio 期刊论文 acs nano, 2015 Qiu, Chenguang; Zhang, Zhiyong; Zhong, Donglai; Si, Jia; Yang, Yingjun; Peng, Lan-Mao 收藏 \| 浏览/下载：2/0 \| 提交时间：2015/11/11 HIGH-PERFORMANCE ELECTRONICS TO-UNIPOLAR CONVERSION INTEGRATED-CIRCUITS THRESHOLD VOLTAGE CMOS DEVICES ARRAYS FABRICATION DEPOSITION TRANSPORT MOBILITY
	Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices 期刊论文半导体学报（英文版）, 2015 Wu Weikang; An Xia; Tan Fei; Feng Hui; Chen Yehua; Liu Jingjing; Zhang Xing 收藏 \| 浏览/下载：3/0 \| 提交时间：2017/12/03 heavy ion displacement damages PDSOI performance degradation heavy ion displacement damages PDSOI performance degradation
	Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices 期刊论文半导体学报（英文版）, 2015 Chen Yehua; An Xia; Wu Weikang; Zhang Yao; Liu Jingjing; Zhang Xing; Huang Ru 收藏 \| 浏览/下载：2/0 \| 提交时间：2017/12/03 heavy ion displacement damage bulk silicon heavy ion displacement damage bulk silicon
	Comparative study of silicon nanowire transistors with triangular-shaped cross sections 期刊论文 JAPANESE JOURNAL OF APPLIED PHYSICS, 2015 Zhang, Yi-Bo; Sun, Lei; Xu, Hao; Han, Jing-Wen; Wang, Yi; Zhang, Sheng-Dong 收藏 \| 浏览/下载：4/0 \| 提交时间：2017/12/03 SCHOTTKY-BARRIER SOURCE/DRAIN MOSFET PERFORMANCE SIMULATION FINFETS LEAKAGE
	Comparative study of silicon nanowire transistors with triangular-shaped cross sections 其他 2015-01-01 Zhang, Yi-Bo; Sun, Lei; Xu, Hao; Han, Jing-Wen; Wang, Yi; Zhang, Sheng-Dong 收藏 \| 浏览/下载：6/0 \| 提交时间：2017/12/04 SCHOTTKY-BARRIER SOURCE/DRAIN MOSFET PERFORMANCE SIMULATION FINFETS LEAKAGE
	Impact of random discrete dopant in extension induced fluctuation in gate-source/drain underlap FinFET 期刊论文日本应用物理学杂志, 2014 Wang, Yijiao; Huang, Peng; Xin, Zheng; Zeng, Lang; Liu, Xiaoyan; Du, Gang; Kang, Jinfeng 收藏 \| 浏览/下载：1/0 \| 提交时间：2015/11/10 DRIFT-DIFFUSION SIMULATIONS K SPACER OPTIMIZATION PERFORMANCE DESIGN

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