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	Resistive-Gate Field-Effect Transistor Exhibiting Steep Subthreshold Slope of 5mV /dec and High I_(ON)/I_(OFF) Ratio; Resistive-Gate Field-Effect Transistor Exhibiting Steep Subthreshold Slope of 5mV /dec and High I_(ON)/I_(OFF) Ratio
	Qianqian Huang ; Zongwei Wang ; Yue Pan ; Yangyuan Wang ; Ru Huang
	2016
关键词	resistive electrically drain steep OFF ON Ratio dec and High I transistor operated resistive electrically drain steep OFF ON Ratio dec and High I transistor operated
英文摘要	In this paper, a new steep-slope device concept of resistive-gate field-effect transistor(RG-FET), which is operated by electrically induced abrupt resistance change of gate stacks, is discussed in detail and experimentally optimized. The fabricated RG-FET demonstrates both an ultra-steep subthreshold slope of below 5mV /dec over almost 2 decades of drain current and a high on-current competitive with conventional MOSFET. The leakage current of RG-FET is also largely reduced for almost 4 decades by MOSFET component optimization, leading to a high I_(ON)/I_(OFF) ratio of 10, which shows that RG-FET is a promising candidate for future low-power electrics applications.; In this paper, a new steep-slope device concept of resistive-gate field-effect transistor(RG-FET), which is operated by electrically induced abrupt resistance change of gate stacks, is discussed in detail and experimentally optimized. The fabricated RG-FET demonstrates both an ultra-steep subthreshold slope of below 5mV /dec over almost 2 decades of drain current and a high on-current competitive with conventional MOSFET. The leakage current of RG-FET is also largely reduced for almost 4 decades by MOSFET; IEEE Beijing Section; 3
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/479773]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Qianqian Huang,Zongwei Wang,Yue Pan,et al. Resistive-Gate Field-Effect Transistor Exhibiting Steep Subthreshold Slope of 5mV /dec and High I_(ON)/I_(OFF) Ratio, Resistive-Gate Field-Effect Transistor Exhibiting Steep Subthreshold Slope of 5mV /dec and High I_(ON)/I_(OFF) Ratio. 2016-01-01.

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