Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

doi:10.1088/1674-4926/36/11/114004

CORC > 北京大学 > 信息科学技术学院

	Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices
	Wu Weikang ; An Xia ; Tan Fei ; Feng Hui ; Chen Yehua ; Liu Jingjing ; Zhang Xing
刊名	半导体学报（英文版）
	2015
关键词	heavy ion displacement damages PDSOI performance degradation heavy ion displacement damages PDSOI performance degradation
DOI	10.1088/1674-4926/36/11/114004
英文摘要	The effects of the physical damages induced by heavy ion irradiation on the performance of partially-depleted SOI devices are experimentally investigated. After heavy ion exposure, different degradation phenomena are observed due to the random strike of heavy ions. A decrease of the saturation current and transconductance, and an enhanced gate-induced drain leakage current are observed, which are mainly attributed to the displacement damages that may be located in the channel, the depletion region of the drain/body junction or the gate-to-drain overlap region. Further, PDSOI devices with and without body contact are compared, which reveals the differences in the threshold voltage shift, the drain-induced barrier lowing effect, the transconductance and the kink effect. The results may provide a guideline for radiation hardened design. ? 2015 Chinese Institute of Electronics.; EI; 中国科技核心期刊(ISTIC); 中国科学引文数据库(CSCD); 11; 39-43; 36
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/435882]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wu Weikang,An Xia,Tan Fei,et al. Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices[J]. 半导体学报（英文版）,2015.
APA	Wu Weikang.,An Xia.,Tan Fei.,Feng Hui.,Chen Yehua.,...&Zhang Xing.(2015).Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices.半导体学报（英文版）.
MLA	Wu Weikang,et al."Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices".半导体学报（英文版） (2015).