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Amorphous silicon carbide films prepared by H-2 diluted silane-methane plasma 期刊论文
journal of crystal growth, 2004, 卷号: 264, 期号: 1-3, 页码: 7-12
Hu ZH; Liao XB; Diao HW; Kong GL; Zeng XB; Xu YY
收藏  |  浏览/下载:32/3  |  提交时间:2010/03/09
The microstructure and its high-temperature annealing behaviours of a-Si : O : H film 期刊论文
acta physica sinica, 2001, 卷号: 50, 期号: 12, 页码: 2418-2422
Wang YQ; Chen CY; Chen WD; Yang FH; Diao HW
收藏  |  浏览/下载:82/6  |  提交时间:2010/08/12
Comparative study of the structural properties of nanocrystalline ge : h plasma deposited onto the cathode and the anode using high hydrogen dilutions 期刊论文
Thin solid films, 1999, 卷号: 346, 期号: 1-2, 页码: 91-95
作者:  Poulsen, PR;  Wang, MX;  Xu, J;  Li, W;  Chen, KJ
收藏  |  浏览/下载:32/0  |  提交时间:2019/05/12
Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions 期刊论文
thin solid films, 1999, 卷号: 346, 期号: 1-2, 页码: 91-95
Poulsen PR; Wang MX; Xu J; Li W; Chen KJ; Wang GH; Feng D
收藏  |  浏览/下载:32/0  |  提交时间:2010/08/12
Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy 期刊论文
applied physics letters, 1998, 卷号: 73, 期号: 3, 页码: 336-338
Sheng SR; Liao XB; Kong GL; Han HX
收藏  |  浏览/下载:49/0  |  提交时间:2010/08/12
PHOTOINDUCED CHANGES OF HYDROGEN-BONDING IN SEMIINSULATING IRON-DOPED INDIUM-PHOSPHIDE 期刊论文
solid state communications, 1995, 卷号: 95, 期号: 12, 页码: 851-854
PAJOT B; SONG CY; DARWICH R; GENDRON F; EWELS C
收藏  |  浏览/下载:18/0  |  提交时间:2010/11/17
EFFECT OF TOTAL HYDROGEN CONTENT IN SILICON-NITRIDE SENSITIVE FILM ON PERFORMANCE OF ISFET 期刊论文
sensors and actuators b-chemical, 1993, 卷号: 12, 期号: 1, 页码: 23-27
CHEN KM; LI GH; LU HY; CHEN LX
收藏  |  浏览/下载:25/0  |  提交时间:2010/11/15


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