Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy

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	Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy
	Sheng SR ; Liao XB ; Kong GL ; Han HX
刊名	applied physics letters
	1998
卷号	73 期号:3 页码:336-338
关键词	A-SI-H CRYSTALLINE SILICON DEPOSITION SPECTRA QUALITY
ISSN号	0003-6951
通讯作者	sheng sr,ecole polytech,couches minces grp,cp 6079,ctr ville,montreal,pq h3c 3a7,canada.
中文摘要	the microstructure, hydrogen bonding configurations and hydrogen content of high quality and stable hydrogenated amorphous silicon (a-si:h) films prepared by a simple ''uninterrupted growth/annealing" plasma enhanced chemical vapor deposition technique have been investigated by raman scattering and infrared absorption spectroscopy. the high stability a-si:h films contain small amounts of a microcrystalline phase and not less hydrogen (10-16 at. %), particularly, the clustered phase hydrogen, besides, the hydrogen distribution is very inhomogeneous. some of these results are substantially distinct from those of conventional device-quality n-si:h film or stable cr-si:h films prepared by the other techniques examined to date. the stability of n-si:h films appears to have no direct correlation with the hydrogen content or the clustered phase hydrogen concentration. the ideal n-si:h network with high stability and low defect density is perhaps not homogeneous. (c) 1998 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13152]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Sheng SR,Liao XB,Kong GL,et al. Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy[J]. applied physics letters,1998,73(3):336-338.
APA	Sheng SR,Liao XB,Kong GL,&Han HX.(1998).Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy.applied physics letters,73(3),336-338.
MLA	Sheng SR,et al."Study of microstructure of high stability hydrogenated amorphous silicon films by Raman scattering and infrared absorption spectroscopy".applied physics letters 73.3(1998):336-338.