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	Comparative study of the structural properties of nanocrystalline ge : h plasma deposited onto the cathode and the anode using high hydrogen dilutions
	Poulsen, PR; Wang, MX; Xu, J; Li, W; Chen, KJ; Wang, GH; Feng, D
刊名	Thin solid films
	1999-06-01
卷号	346期号:1-2页码:91-95
关键词	Chemical vapour deposition Germanium Nanostructures Structural properties
ISSN号	0040-6090
通讯作者	Chen, kj()
英文摘要	Nanocrystalline ge:h thin films were deposited simultaneously on both electrodes of a conventional capacitively coupled reactor for plasma enhanced chemical vapor deposition using highly h-2 diluted geh4 as the source gas. the structure of the films was investigated by raman scattering and x-ray diffraction as a function of substrate temperature, h-2 dilution, and r.f. power. the hydrogen concentrations and bonding configurations were determined by infrared absorption spectroscopy. for anodic deposition, the preferred crystallographic orientation and film crystallinity depend rather strongly on the deposition parameters. this dependence can be explained by changing surface mobilities of adsorbed precursors due to changes in the hydrogen coverage of the growing surface. cathodic deposition is much less sensitive to variations in the deposition parameters. it generally results in films of high crystallinity with randomly oriented crystallizes. some possible mechanisms for these differences between anodic and cathodic deposition are discussed. (c) 1999 elsevier science s.a. all rights reserved.
WOS关键词	POLYCRYSTALLINE SILICON FILMS ; AMORPHOUS-SILICON ; GERMANIUM ; CRYSTALLINE ; DISCHARGE ; CELL
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000081019400006
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428750
专题	半导体研究所
通讯作者	Chen, KJ
作者单位	1.Nanjing Univ, Natl Lab State Microstruct, Nanjing 210093, Peoples R China 2.Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Poulsen, PR,Wang, MX,Xu, J,et al. Comparative study of the structural properties of nanocrystalline ge : h plasma deposited onto the cathode and the anode using high hydrogen dilutions[J]. Thin solid films,1999,346(1-2):91-95.
APA	Poulsen, PR.,Wang, MX.,Xu, J.,Li, W.,Chen, KJ.,...&Feng, D.(1999).Comparative study of the structural properties of nanocrystalline ge : h plasma deposited onto the cathode and the anode using high hydrogen dilutions.Thin solid films,346(1-2),91-95.
MLA	Poulsen, PR,et al."Comparative study of the structural properties of nanocrystalline ge : h plasma deposited onto the cathode and the anode using high hydrogen dilutions".Thin solid films 346.1-2(1999):91-95.

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