The microstructure and its high-temperature annealing behaviours of a-Si : O : H film

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	The microstructure and its high-temperature annealing behaviours of a-Si : O : H film
	Wang YQ ; Chen CY ; Chen WD ; Yang FH ; Diao HW
刊名	acta physica sinica
	2001
卷号	50 期号:12 页码:2418-2422
关键词	a-Si : O : H nc-Si microstructure annealing CHEMICAL-VAPOR-DEPOSITION AMORPHOUS SIO2 OPTICAL-PROPERTIES SILICON
ISSN号	1000-3290
通讯作者	wang yq,chinese acad sci,inst semicond,state key lab surface phys,beijing 100083,peoples r china.
中文摘要	the microstructure and its annealing behaviours of a-si:o:h film prepared by pecvd are investigated in detail using micro-raman spectroscopy, x-ray photoelectron spectroscopy and infrared absorption spectroscopy. the results indicate that the as-deposited a-si:o:h film is structural inhomogeneous, with si-riched phases surrounded by o-riched phases. the si-riched phases are found to be nonhydrogenated amorphous silicon (a-si) clusters, and the o-riched phases siox:h (x approximate to 1. 35) are formed by random bonding of si, o and h atoms. by high-temperature annealing at 1150 degreesc, the siox:h (x approximate to 1.35) matrix is shown to be transformed into sio2 and siox ( x approximate to 0.64), during which all of the hydrogen atoms in the film escape and some of silicon atoms are separated from the siox:h ( x approximate to 1.35) matrix; the separated silicon atoms are found to be participated in the nucleation and growth processes of solid-phase crystallization of the a-si clusters, nano-crystalline silicon (ne-si) is then formed. the microstructure of the annealed film is thereby described with a multi-shell model, in which the ne-si clusters are embedded in siox (x = 0.64) and sio2. the former is located at the boundaries of the nc-si clusters, with a thickness comparable with the scale of nc-si clusters, and forms the transition oxide layer between the ne-si and the sio2 matrix.
学科主题	半导体物理
收录类别	SCI
语种	中文
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12026]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang YQ,Chen CY,Chen WD,et al. The microstructure and its high-temperature annealing behaviours of a-Si : O : H film[J]. acta physica sinica,2001,50(12):2418-2422.
APA	Wang YQ,Chen CY,Chen WD,Yang FH,&Diao HW.(2001).The microstructure and its high-temperature annealing behaviours of a-Si : O : H film.acta physica sinica,50(12),2418-2422.
MLA	Wang YQ,et al."The microstructure and its high-temperature annealing behaviours of a-Si : O : H film".acta physica sinica 50.12(2001):2418-2422.