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北京大学 [17]

兰州理工大学 [4]

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	A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates 期刊论文 Vacuum, 2022, 卷号: 201 作者: Wang, Xiaoye; Bai, Xue; Yang, Xiaoguang; Du, Wenna; Yang, Tao 收藏 \| 浏览/下载：17/0 \| 提交时间：2022/06/20 Crystal defects Gallium alloys III-V semiconductors Indium alloys Metallorganic chemical vapor deposition Morphology Nanowires Semiconducting indium gallium arsenide Semiconductor alloys Silicon Substrates Growth morphology High-temperature annealing Inas nanowire Metal-organic chemical vapour depositions Optimisations Parasitic island Parasitics Si substrates Substrate surface Treatment methods
	A theoretical and experimental study on effect of growth time on self-catalyzed InAs nanowires 期刊论文 Applied Surface Science, 2020, 卷号: 518 作者: Wang, Xiaoye; Bai, Xue; Yang, Xiaoguang; Liu, Xiaoming; Du, Wenna 收藏 \| 浏览/下载：4/0 \| 提交时间：2022/02/17 Adatoms Catalysis III-V semiconductors Metallorganic chemical vapor deposition Nanowires Organic chemicals Organometallics Silicon Diameter dependences Diffusion length Inas nanowires Kinetic growth Seed particle Self-catalyzed Self-catalyzed growth Si substrates
	A theoretical and experimental study on effect of growth time on self-catalyzed InAs nanowires 会议论文作者: Wang, Xiaoye; Bai, Xue; Yang, Xiaoguang; Liu, Xiaoming; Du, Wenna 收藏 \| 浏览/下载：3/0 \| 提交时间：2020/12/18 Adatoms Catalysis III-V semiconductors Metallorganic chemical vapor deposition Nanowires Organic chemicals Organometallics SiliconDiameter dependences Diffusion length Inas nanowires Kinetic growth Seed particle Self-catalyzed Self-catalyzed growth Si substrates
	A theoretical and experimental study on effect of growth time on self-catalyzed InAs nanowires 期刊论文 Applied Surface Science, 2020, 卷号: 518, 期号: 146174, 页码: 146174 作者: Wang XY(王小耶) 收藏 \| 浏览/下载：19/0 \| 提交时间：2020/11/10 InAs nanowires Self-catalyzed growth MOCVD Kinetic growth process
	Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2017 Wang, Xiaoye; Yang, Wenyuan; Wang, Baojun; Ji, Xianghai; Xu, Shengyong; Wang, Wei; Chen, Qing; Yang, Tao 收藏 \| 浏览/下载：3/0 \| 提交时间：2017/12/03 Nanowires Surfaces Metalorganic chemical vapor deposition Selective-area growth Nanomaterials InAs III-V NANOWIRES HIGHLY UNIFORM TRANSISTORS HETEROEPITAXY DIRECTION SILICON ATOMS GAAS
	Extracting band structure characteristics of GaSb/InAs core-shell nanowires from thermoelectric properties 期刊论文 PHYSICAL REVIEW B, 2017 Vinas, Florinda; Xu, H. Q.; Leijnse, Martin 收藏 \| 浏览/下载：8/0 \| 提交时间：2017/12/03 INAS NANOWIRES GASB HETEROSTRUCTURES CONDUCTANCE INAS/GASB MODEL FIELD GAAS
	Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires 期刊论文 NANO LETTERS, 2016 Fu, Mengqi; Tang, Zhiqiang; Li, Xing; Ning, Zhiyuan; Pan, Dong; Zhao, Jianhua; Wei, Xianlong; Chen, Qing 收藏 \| 浏览/下载：4/0 \| 提交时间：2017/12/03 InAs nanowires electrical properties crystal phase crystal orientation nanomanipulation FIELD-EFFECT TRANSISTORS PERFORMANCE DIAMETER MOBILITY HETEROSTRUCTURES SUPERCONDUCTOR ELECTRONICS WURTZITE SURFACES MOSFETS
	Ultrafast and reversible electrochemical lithiation of InAs nanowires observed by in-situ transmission electron microscopy 期刊论文 NANO ENERGY, 2016 Li, Xing; Xiao, Dongdong; Zheng, Hao; Wei, Xianlong; Wang, Xiaoye; Gu, Lin; Hu, Yong-Sheng; Yang, Tao; Chen, Qing 收藏 \| 浏览/下载：5/0 \| 提交时间：2017/12/03 InAs nanowire Lithium ion battery In-situ TEM Fast lithiation Stacking faults LITHIUM-ION BATTERIES SILICON NANOWIRES REACTION FRONT GE NANOWIRES ANODES DELITHIATION GERMANIUM PERFORMANCE TRANSISTORS CONVERSION
	InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition 期刊论文 NANOTECHNOLOGY, 2016 Ji, Xianghai; Yang, Xiaoguang; Du, Wenna; Pan, Huayong; Luo, Shuai; Ji, Haiming; Xu, H. Q.; Yang, Tao 收藏 \| 浏览/下载：4/0 \| 提交时间：2017/12/03 nanowires core-shell heterostructure InAs/GaSb metal-organic chemical vapor deposition FIELD-EFFECT TRANSISTORS III-V NANOWIRES INASSB NANOWIRES INGAAS NANOWIRES GAAS NANOWIRES PHASE EPITAXY DEFECT-FREE HETEROSTRUCTURES LUMINESCENCE SILICON
	Electronic structures of [111]-oriented free-standing InAs and InP nanowires 期刊论文 JOURNAL OF PHYSICS-CONDENSED MATTER, 2016 Liao, Gaohua; Luo, Ning; Chen, Ke-Qiu; Xu, H. Q. 收藏 \| 浏览/下载：5/0 \| 提交时间：2017/12/03 semiconductor nanowire band structure InAs InP spin-orbit interaction tight-binding method INDIUM-PHOSPHIDE NANOWIRES BIAS CONDUCTANCE PEAK CORE-SHELL NANOWIRES TOPOLOGICAL SUPERCONDUCTOR MAJORANA FERMIONS HYBRID DEVICE SOLAR-CELLS SEMICONDUCTORS HETEROSTRUCTURES ZINCBLENDE

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