Effect of nanohole size on selective area growth of InAs nanowire arrays   on Si substrates

doi:10.1016/j.jcrysgro.2016.12.026

CORC > 北京大学 > 信息科学技术学院

	Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates
	Wang, Xiaoye ; Yang, Wenyuan ; Wang, Baojun ; Ji, Xianghai ; Xu, Shengyong ; Wang, Wei ; Chen, Qing ; Yang, Tao
刊名	JOURNAL OF CRYSTAL GROWTH
	2017
关键词	Nanowires Surfaces Metalorganic chemical vapor deposition Selective-area growth Nanomaterials InAs III-V NANOWIRES HIGHLY UNIFORM TRANSISTORS HETEROEPITAXY DIRECTION SILICON ATOMS GAAS
DOI	10.1016/j.jcrysgro.2016.12.026
英文摘要	We have investigated the influence of nanohole size on selective-area growth (SAG) of InAs nanowire (NW) arrays on Si(111) substrates by metal-organic chemical vapor deposition. The growth of well-defined and position-controlled InAs NW arrays with united vertical orientation can be achieved on the patterned substrates with a certain range of nanohole size, which paves the way for the fabrication of high-electron-mobility and surrounding-gate transistor arrays using NWs as channels. Moreover, it is found that more than one NW are increasingly likely grown per nanohole as the nanohole size increases, and the NWs become increasingly thin and short. This is considered to be due to the supersaturation of adsorbed species in the nanohole and the intense competition for adatoms among multiple NWs per nanohole.; MOST of China [2012CB932701]; SCI(E); ARTICLE; 1-4; 460
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/475137]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Xiaoye,Yang, Wenyuan,Wang, Baojun,et al. Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates[J]. JOURNAL OF CRYSTAL GROWTH,2017.
APA	Wang, Xiaoye.,Yang, Wenyuan.,Wang, Baojun.,Ji, Xianghai.,Xu, Shengyong.,...&Yang, Tao.(2017).Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates.JOURNAL OF CRYSTAL GROWTH.
MLA	Wang, Xiaoye,et al."Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates".JOURNAL OF CRYSTAL GROWTH (2017).