A theoretical and experimental study on effect of growth time on self-catalyzed InAs nanowires

doi:10.1016/j.apsusc.2020.146174

	A theoretical and experimental study on effect of growth time on self-catalyzed InAs nanowires
	Wang, Xiaoye 1,2,8; Bai, Xue 3; Yang, Xiaoguang 4,5; Liu, Xiaoming 7; Du, Wenna 6; Yang, Tao 4,5
	2020-07-15
关键词	Adatoms Catalysis III-V semiconductors Metallorganic chemical vapor deposition Nanowires Organic chemicals Organometallics SiliconDiameter dependences Diffusion length Inas nanowires Kinetic growth Seed particle Self-catalyzed Self-catalyzed growth Si substrates
卷号	518
DOI	10.1016/j.apsusc.2020.146174
英文摘要	We in detail investigated the effect of growth time on InAs nanowires (NWs) grown on Si substrates by metal-organic chemical vapor deposition. It is found that the axial growth of InAs NWs is nonlinear and shows different trends with different NW diameters. Thin NWs grow faster than thick NWs in length, and the radius of both thin and thick NWs have no dependence on growth time. Based on self-catalyzed growth mechanism, we established a kinetic growth process to simulate the growth of InAs NWs on Si. We analyzed some dependences, including length-time, diameter-time and length-diameter dependences. Calculations are in good agreements with experimental ones. It indicates that growth saturation and growth rates of NWs are determined by diffusion length of In adatoms, initial diameter of seed particles and the amount of adatoms per unit area. © 2020 Elsevier B.V.
会议录	Applied Surface Science
会议录出版者	Elsevier B.V., Netherlands
语种	英语
ISSN号	01694332
内容类型	会议论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/132715]
专题	电气工程与信息工程学院
作者单位	1.Key Laboratory of Gansu Advanced Control for Industrial Processes, Lanzhou University of Technology, Lanzhou; 730050, China; 2.National Demonstration Center for Experimental Electrical and Control Engineering Education, Lanzhou University of Technology, Lanzhou; 730050, China; 3.School of Physical Science and Technology, Lanzhou University, Lanzhou; 730000, China; 4.Center of Materials Science and Opto-Electronic Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China; 5.Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing; 100083, China; 6.CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing; 100190, China 7.The First Primary School of Hexipu Town, Yongchang County, Gansu Province; 737202, China; 8.College of Electrical and Information Engineering, Lanzhou University of Technology, Lanzhou; 730050, China;
推荐引用方式 GB/T 7714	Wang, Xiaoye,Bai, Xue,Yang, Xiaoguang,et al. A theoretical and experimental study on effect of growth time on self-catalyzed InAs nanowires[C]. 见:.