×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [7]
上海微系统与信息技术... [2]
湖南大学 [2]
内容类型
期刊论文 [11]
发表日期
2012 [2]
2011 [1]
2010 [4]
2002 [1]
1995 [1]
1994 [1]
更多...
学科主题
半导体材料 [4]
Engineerin... [1]
Physics, M... [1]
光电子学 [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共11条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Heteroepitaxial growth of GaSb nanotrees with an ultra-low reflectivity in a broad spectral range
期刊论文
Nano Letters, 2012, 卷号: Vol.12 No.4, 页码: 1799-1805
作者:
Yan, C.
;
Li, X.
;
Zhou, K.
;
Pan, A.
;
Werner, P.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2020/01/05
chemical
beam
epitaxial
growth
Gallium
antimonide
III-V
semiconductors
low-band
gap
semiconductors
nanostructured
materials
semiconductor
growth
Heteroepitaxial Growth of GaSb Nanotrees with an Ultra-Low Reflectivity in a Broad Spectral Range
期刊论文
Nano Letters, 2012, 卷号: Vol.12 No.4, 页码: 1799-1805
作者:
Yan, CL
;
Li, XP
;
Zhou, K
;
Pan, AL
;
Werner, P
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2020/01/05
Gallium antimonide
III?V semiconductors
low-band gap semiconductors
nanostructured materials
semiconductor growth
chemical beam epitaxial growththe cellogical sensinge)
rheologyture
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation
期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H
;
Zhou K
;
Pang JB
;
Shao YD
;
Wang Z
;
Zhao YW
收藏
  |  
浏览/下载:52/10
  |  
提交时间:2011/07/05
UNDOPED GALLIUM ANTIMONIDE
SELF-DIFFUSION
NATIVE DEFECTS
N-TYPE
CRYSTALS
CATHODOLUMINESCENCE
PHOTOLUMINESCENCE
SEMICONDUCTORS
SPECTROSCOPY
LUMINESCENCE
Molecular beam epitaxy of gasb on gaas substrates with alsb/gasb compound buffer layers
期刊论文
Thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
作者:
Hao, Ruiting
;
Deng, Shukang
;
Shen, Lanxian
;
Yang, Peizhi
;
Tu, Jielei
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2019/05/12
Gallium arsenide
Gallium antimonide
Gallium antimonide/aluminum antimonide
Superlattices
Molecular beam epitaxy
Evaluation of thermal radiation dependent performance of gasb thermophotovoltaic cell based on an analytical absorption coefficient model
期刊论文
Solar energy materials and solar cells, 2010, 卷号: 94, 期号: 10, 页码: 1704-1710
作者:
Wang, Y.
;
Chen, N. F.
;
Zhang, X. W.
;
Huang, T. M.
;
Yin, Z. G.
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2019/05/12
Thermophotovoltaic
Gallium antimonide
Absorption coefficient
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers
期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting)
;
Deng SK (Deng Shukang)
;
Shen LX (Shen Lanxian)
;
Yang PZ (Yang Peizhi)
;
Tu JL (Tu Jielei)
;
Liao H (Liao Hua)
;
Xu YQ (Xu Yingqiang)
;
Niu ZC (Niu Zhichuan)
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/12/28
Gallium Arsenide
Gallium antimonide
Gallium antimonide/Aluminum antimonide
Superlattices
Molecular Beam Epitaxy
VAPOR-PHASE EPITAXY
SURFACE-MORPHOLOGY
GROWTH
SUPERLATTICES
TEMPERATURE
RELAXATION
DETECTORS
GAAS(001)
MOCVD
FILMS
Evaluation of thermal radiation dependent performance of GaSb thermophotovoltaic cell based on an analytical absorption coefficient model
期刊论文
solar energy materials and solar cells, 2010, 卷号: 94, 期号: 10, 页码: 1704-1710
Wang Y (Wang Y.)
;
Chen NF (Chen N. F.)
;
Zhang XW (Zhang X. W.)
;
Huang TM (Huang T. M.)
;
Yin ZG (Yin Z. G.)
;
Wang YS (Wang Y. S.)
;
Zhang H (Zhang H.)
收藏
  |  
浏览/下载:190/22
  |  
提交时间:2010/09/07
Thermophotovoltaic
Gallium antimonide
Absorption coefficient
Excitonic photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films
期刊论文
journal of luminescence, 2002, 卷号: 99, 期号: 3, 页码: 273-281
Liu FM
;
Wang TM
;
Zhang LD
;
Li GH
;
Han HX
收藏
  |  
浏览/下载:55/0
  |  
提交时间:2010/08/12
nanocrystals
photoluminescence
quantum confinement
GaSb
Ga0.62In0.38Sb
LIQUID-PHASE EPITAXY
X-RAY PHOTOELECTRON
GALLIUM ANTIMONIDE
COMPOSITE FILMS
QUANTUM DOTS
RAMAN
SPECTROSCOPY
DEPOSITION
SPECTRA
MATRIX
MOCVD GAINASSB HETEROSTRUCTURE MATERIALS FOR 2-4-MU-M PHOTODETECTORS
期刊论文
COMPOUND SEMICONDUCTORS 1994, 1995, 期号: 141, 页码: 603-606
WEI,GY
;
PENG,RW
;
WU,W
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2012/03/25
P-N PHOTODIODES
GALLIUM ANTIMONIDE
MU-M
GROWTH
EPITAXY
GASB
WAVELENGTH
RANGE
SNTE
GROWTH-KINETICS OF GASB BY METALORGANIC VAPOR-PHASE EPITAXY
期刊论文
JOURNAL OF ELECTRONIC MATERIALS, 1994, 卷号: 23, 期号: 2, 页码: 217-220
WEI, GY
;
PENG, RW
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2012/03/25
GALLIUM ANTIMONIDE
MOVPE
©版权所有 ©2017 CSpace - Powered by
CSpace