GROWTH-KINETICS OF GASB BY METALORGANIC VAPOR-PHASE EPITAXY

	GROWTH-KINETICS OF GASB BY METALORGANIC VAPOR-PHASE EPITAXY
	WEI, GY ; PENG, RW
刊名	JOURNAL OF ELECTRONIC MATERIALS
	1994
卷号	23 期号:2 页码:217-220
关键词	GALLIUM ANTIMONIDE MOVPE
ISSN号	0361-5235
通讯作者	WEI, GY, CHINESE ACAD SCI,SHANGHAI INST MET,SHANGHAI 200050,PEOPLES R CHINA
学科主题	Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Applied
收录类别	SCI
语种	英语
公开日期	2012-03-25
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/98567]
专题	上海微系统与信息技术研究所_功能材料与器件_期刊论文（1999年以前)
推荐引用方式 GB/T 7714	WEI, GY,PENG, RW. GROWTH-KINETICS OF GASB BY METALORGANIC VAPOR-PHASE EPITAXY[J]. JOURNAL OF ELECTRONIC MATERIALS,1994,23(2):217-220.
APA	WEI, GY,&PENG, RW.(1994).GROWTH-KINETICS OF GASB BY METALORGANIC VAPOR-PHASE EPITAXY.JOURNAL OF ELECTRONIC MATERIALS,23(2),217-220.
MLA	WEI, GY,et al."GROWTH-KINETICS OF GASB BY METALORGANIC VAPOR-PHASE EPITAXY".JOURNAL OF ELECTRONIC MATERIALS 23.2(1994):217-220.