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	Molecular beam epitaxy of gasb on gaas substrates with alsb/gasb compound buffer layers
	Hao, Ruiting1,2; Deng, Shukang1; Shen, Lanxian1; Yang, Peizhi1; Tu, Jielei1; Liao, Hua1; Xu, Yingqiang2; Niu, Zhichuan2
刊名	Thin solid films
	2010-10-29
卷号	519期号:1页码:228-230
关键词	Gallium arsenide Gallium antimonide Gallium antimonide/aluminum antimonide Superlattices Molecular beam epitaxy
ISSN号	0040-6090
DOI	10.1016/j.tsf.2010.08.001
通讯作者	Hao, ruiting(ruitinghao@semi.ac.cn)
英文摘要	Gasb films with alsb/gasb compound buffer layers were grown by molecular beam epitaxy on gaas (001) substrates. the crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (pl), respectively. it was found that the alsb/gasb compound buffer layers can restrict the dislocations into gasb epilayers. the intensity of pl spectra of gasb layer becomes large with the increasing the periods of alsb/gasb superlattices, indicating that the optical quality of gasb films is improved. (c) 2010 elsevier b.v. all rights reserved.
WOS关键词	VAPOR-PHASE EPITAXY ; SURFACE-MORPHOLOGY ; GROWTH ; SUPERLATTICES ; TEMPERATURE ; RELAXATION ; DETECTORS ; GAAS(001) ; MOCVD ; FILMS
WOS研究方向	Materials Science ; Physics
WOS类目	Materials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000283955200040
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2428087
专题	半导体研究所
通讯作者	Hao, Ruiting
作者单位	1.Yunnan Normal Univ, Inst Solar Energy, Key Lab Renewable Energy Adv Mat & Mfg Technol, Educ Minist, Kunming 650092, Yunnan Province, Peoples R China 2.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Hao, Ruiting,Deng, Shukang,Shen, Lanxian,et al. Molecular beam epitaxy of gasb on gaas substrates with alsb/gasb compound buffer layers[J]. Thin solid films,2010,519(1):228-230.
APA	Hao, Ruiting.,Deng, Shukang.,Shen, Lanxian.,Yang, Peizhi.,Tu, Jielei.,...&Niu, Zhichuan.(2010).Molecular beam epitaxy of gasb on gaas substrates with alsb/gasb compound buffer layers.Thin solid films,519(1),228-230.
MLA	Hao, Ruiting,et al."Molecular beam epitaxy of gasb on gaas substrates with alsb/gasb compound buffer layers".Thin solid films 519.1(2010):228-230.

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