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Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:
Zheng, QW (Zheng, Qiwen) 1
;
Cui, JW (Cui, Jiangwei) 1
;
Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2021/08/06
Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
Lattice Defects and Exfoliation Efficiency of 6H-SiC via H-2(+) Implantation at Elevated Temperature
期刊论文
MATERIALS, 2020, 卷号: 13, 期号: 24, 页码: 13
作者:
Wang, Tao
;
Yang, Zhen
;
Li, Bingsheng
;
Xu, Shuai
;
Liao, Qing
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  |  
浏览/下载:14/0
  |  
提交时间:2021/12/13
6H-SiC
H-2(+) implantation
exfoliation
microstructure
Design and fabrication of 1×N polarization-insensitive beam splitters based on 2D subwavelength gratings
期刊论文
Optics Communications, 2020, 卷号: 456
作者:
Wu, Gang
;
Huang, Yongqing
;
Duan, Xiaofeng
;
Liu, Kai
;
Ma, Xiaokai
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  |  
浏览/下载:5/0
  |  
提交时间:2020/11/14
Fabrication
Optical beam splitters
Optical instruments
Polarization
Silicon on insulator technology
Silicon wafers
Wavefronts
Beam splitter
High index contrast
Phase contral
Polarization sensitivity
Polarization-insensitive
Silicon on insulator wafers
Sub-wave length grating
The rigorous coupledwave analyses (RCWA)
An Analytical Subthreshold Swing Model for fully-depleted MOSFETs with vertical Gaussian profile fabricated on modified silicon-on-insulator wafers
期刊论文
Microsystem Technologies, 2018
作者:
Huang, Huixiang
;
Wei, Sufen
;
Pan, Jinyan
;
Xu, Wenbin
;
Mei, Qiang
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/11/19
Analytical results
Experimental extraction
Gaussian profiles
Non-uniform doping
Radiation-hardened
Silicon on insulator wafers
Subthreshold swing
Technology computer aided design
Study of surface exfoliation on 6H-SiC induced by H-2(+) implantation
期刊论文
PHYSICA B-CONDENSED MATTER, 2017, 卷号: 508, 页码: 104-111
作者:
Zhang, L.
;
Li, B. S.
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  |  
浏览/下载:9/0
  |  
提交时间:2018/05/31
Smart-cut
H-2(+) implantation
Transmission electron microscopy
Exfoliation
Blisters
Process for fabricating microactuator membranes of piezoelectric inkjet print head using multi-step deep reactive ion etching process
期刊论文
MICRO & NANO LETTERS, 2017, 卷号: 12, 页码: 482-485
作者:
Wang, Wenqiang
;
Li, Chen
;
Xu, Wencai
;
Zou, Helin
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  |  
浏览/下载:2/0
  |  
提交时间:2019/12/02
microactuators
membranes
ink jet printing
sputter etching
silicon
elemental semiconductors
microactuator membranes
piezoelectric inkjet print head
multistep deep reactive ion etching process
multilayered structures
multilayered actuator membranes
silicon on insulator wafers
notching effect
Si
SiO2
Experiment of restraint of atmospheric turbulence using diversity technology based on analysis of offshore laser communication
期刊论文
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2016, 卷号: 45, 期号: 3
作者:
Li, Y.
;
S. Gao and L. Sheng
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  |  
浏览/下载:17/0
  |  
提交时间:2017/09/11
Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure
期刊论文
Applied Surface Science, 2015, 卷号: 356, 期号: 30, 页码: 1052-1057
作者:
Lin Ye
;
Miao Zhang
;
Zengfeng Di
;
Zhongyin Xue
;
Jianhong Yang
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2015/10/09
Defect density
Condensation
Defects
Dislocations (crystals)
Germanium
Hole mobility
Interfaces (materials)
Semiconductor insulator boundaries
Silicon alloys
Silicon wafers
Density of defects
Ge condensation
Ge on insulators
Low defect densities
SiGe-on-insulator structures
Threading dislocation
Threading dislocation densities
Wafer manufacturing
GaAs-on-insulator fabricated via ion-cut in epitaxial GaAs /Ge substrate
会议论文
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, October 28, 2014 - October 31, 2014
作者:
Chang, Yongwei
;
Chen, Da
;
Di, Zengfeng
;
Zhang, Miao
;
Yu, Wenjie
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  |  
浏览/下载:0/0
  |  
提交时间:2017/01/20
Semiconducting gallium
Bonding
Chemical bonds
Etching
Gallium arsenide
Germanium
Molecular beam epitaxy
Silicon oxides
Silicon wafers
Wafer bonding
Annealing temperatures
Bulk substrates
Chemical etching
Dose implantation
Epitaxial GaAs
High-crystalline quality
Room temperature bonding
Sacrificial layer
Effects of annealing temperature on buried oxide precipitates in He and O co-implanted Si
期刊论文
VACUUM, 2013, 卷号: 93, 期号: 93, 页码: 22-27
作者:
Zhong, YR
;
Li, BS
;
Wang, BY
;
Qin, XB
;
Zhang, LQ
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  |  
浏览/下载:36/0
  |  
提交时间:2015/10/15
Ion implantation
Oxide precipitates
Si-O stretching band
Vacancy-type defects
Microstructures
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